Title: Recent issues in negative-bias temperature instability: Initial degradation, field dependence of interface trap generation, hole trapping effects, and relaxation Author(s): ISLAM, AE; KUFLUOGLU, H; VARGHESE, D; et al. Source: IEEE TRANSACTIONS ON ELECTRON DEVICES Volume: 54 Issue: 9 Pages: 2143-2154 Published: SEP 2007 Times Cited: 20 DOI: 10.1109/TED.2007.902883
added
13-Feb-08
2.
Title: On the physical mechanism of NBTI in silicon oxynitride p-MOSFETs: Can differences in insulator processing conditions resolve the interface trap generation versus hole trapping controversy? Patent Assignee: IEEE Inventor(s): MAHAPATRA, S; AHMED, K; VARGHESE, D; et al.
Times Cited: 12
added
07-Feb-09
3.
Title: Material dependence of NBTI physical mechanism in silicon oxynitride (SiON) p-MOSFETs: A comprehensive study by ultra-fast on-the-fly (UF-OTF) I-DLIN technique Patent Assignee: IEEE Inventor(s): KUMAR, EN; MAHETA, VD; PURAWAT, S; et al.
Times Cited: 11
added
07-Feb-09
4.
Title: Theory and practice of on-the-fly and ultra-fast V-T measurements for NBTI degradation: Challenges and opportunities Patent Assignee: IEEE Inventor(s): ISLAM, AE; KUMAR, EN; DAS, H; et al.
Times Cited: 10
added
07-Feb-09
5.
Title: Critical analysis of short-term negative bias temperature instability measurements: Explaining the effect of time-zero delay for on-the-fly measurements Author(s): ISLAM, AE; KUFLUOGLU, H; VARGHESE, D; et al. Source: APPLIED PHYSICS LETTERS Volume: 90 Issue: 8 Published: FEB 19 2007 Times Cited: 7
added
07-Feb-09
6.
Title: Accumulation gate capacitance of MOS devices with ultrathin high-k gate dielectrics: Modeling and characterization Author(s): ISLAM, AE; HAQUE, A Source: IEEE TRANSACTIONS ON ELECTRON DEVICES Volume: 53 Issue: 6 Pages: 1364-1372 Published: JUN 2006 Times Cited: 4
added
07-Feb-09
7.
Title: Mobility degradation due to interface traps in plasma oxynitride PMOS devices Patent Assignee: IEEE, ELECTRON DEVICES SOC & RELIABILITY GROUP Inventor(s): ISLAM, AE; MAHETA, VD; DAS, H; et al.
Times Cited: 1
added
07-Feb-09
8.
Title: Separation method of hole trapping and interface trap generation and their roles in NBTI reaction-diffusion model Patent Assignee: IEEE, ELECTRON DEVICES SOC & RELIABILITY GROUP Inventor(s): LEE, JH; WU, WH; ISLAM, AE; et al.
Times Cited: 0
added
07-Feb-09
9.
Title: Exploring the Capability of Multifrequency Charge Pumping in Resolving Location and Energy Levels of Traps Within Dielectric Author(s): MASUDUZZAMAN, M; ISLAM, AE; ALAM, MA Source: IEEE TRANSACTIONS ON ELECTRON DEVICES Volume: 55 Issue: 12 Pages: 3421-3431 Published: 2008 Times Cited: 0
added
07-Feb-09
10.
Title: On the possibility of degradation-free field effect transistors Author(s): ISLAM, AE; ALAM, MA Source: APPLIED PHYSICS LETTERS Volume: 92 Issue: 17 Published: 2008 Times Cited: 0
