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Wallace, Robert M
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ResearcherID: A-5283-2008
URL: http://www.researcherid.com/rid/A-5283-2008
Subject: Engineering; Materials Science; Physics
ORCID: http://orcid.org/0000-0001-5566-4806
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This list contains papers that I have authored.

publication(s)  
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1. Title: Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study.
Author(s): Zhu, Hui; McDonnell, Stephen; Qin, Xiaoye; et al.
Source: ACS applied materials & interfaces Volume: 7 Issue: 23 Pages: 13038-43 Published: 2015-Jun-17
DOI: 10.1021/acsami.5b03192
added
08-Jul-15
2. Title: HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
Author(s): Yue, R. Y.; Barton, A. T.; Zhu, H.; et al.
Source: Acs Nano Volume: 9 Issue: 1 Pages: 474-480 Published: 2015
Times Cited: 3
DOI: 10.1021/nn5056496
added
19-Mar-15
3. Title: High-K materials and metal gates for CMOS applications
Author(s): Robertson, J.; Wallace, R. M.
Source: Materials Science & Engineering R-Reports Volume: 88 Pages: 1-41 Published: 2015
Times Cited: 1
DOI: 10.1016/j.mser.2014.11.001
added
19-Mar-15
4. Title: Highly Scalable, Atomically Thin WSe2 Grown via Metal-Organic Chemical Vapor Deposition
Author(s): Eichfeld, S. M.; Hossain, L.; Lin, Y. C.; et al.
Source: Acs Nano Volume: 9 Issue: 2 Pages: 2080-2087 Published: 2015
Times Cited: 3
DOI: 10.1021/nn5073286
added
19-Mar-15
5. Title: In Situ TEM Characterization of Shear-Stress-Induced Interlayer Sliding in the Cross Section View of Molybdenum Disulfide
Author(s): Oviedo, J. P.; Santosh, K. C.; Lu, N.; et al.
Source: Acs Nano Volume: 9 Issue: 2 Pages: 1543-1551 Published: 2015
Times Cited: 2
DOI: 10.1021/nn506052d
added
19-Mar-15
6. Title: Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors
Author(s): Makela, J.; Tuominen, M.; Kuzmin, M.; et al.
Source: Applied Surface Science Volume: 329 Pages: 371-375 Published: 2015
Times Cited: 0
DOI: 10.1016/j.apsusc.2014.12.155
added
19-Mar-15
7. Title: Seeding Atomic Layer Deposition of Alumina on Graphene with Yttria
Author(s): Dahal, A.; Addou, R.; Azcatl, A.; et al.
Source: Acs Applied Materials & Interfaces Volume: 7 Issue: 3 Pages: 2082-2087 Published: 2015
Times Cited: 0
DOI: 10.1021/am508154n
added
19-Mar-15
8. Title: Surface Defects on Natural MoS2.
Author(s): Addou, Rafik; Colombo, Luigi; Wallace, Robert M
Source: ACS applied materials & interfaces Volume: 7 Issue: 22 Pages: 11921-9 Published: 2015-Jun-10
DOI: 10.1021/acsami.5b01778
added
08-Jul-15
9. Title: Surface oxidation energetics and kinetics on MoS2 monolayer
Author(s): Santosh, K. C.; Longo, Roberto C.; Wallace, Robert M.; et al.
Source: Journal of Applied Physics Volume: 117 Issue: 13 Published: APR 7 2015
Times Cited: 0
DOI: 10.1063/1.4916536
added
13-May-15
10. Title: A crystalline oxide passivation for Al2O3/AlGaN/GaN
Author(s): Qin, Xiaoye; Dong, Hong; Kim, Jiyoung; et al.
Source: Applied Physics Letters Volume: 105 Issue: 14 Published: OCT 6 2014
Times Cited: 1
DOI: 10.1063/1.4897641
added
05-Jan-15
publication(s)  
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