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Wallace, Robert M
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ResearcherID: A-5283-2008
URL: http://www.researcherid.com/rid/A-5283-2008
Subject: Engineering; Materials Science; Physics
ORCID: http://orcid.org/0000-0001-5566-4806
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This list contains papers that I have authored.

publication(s)  
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1. Title: HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
Author(s): Yue, R. Y.; Barton, A. T.; Zhu, H.; et al.
Source: Acs Nano Volume: 9 Issue: 1 Pages: 474-480 Published: 2015
Times Cited: 0
DOI: 10.1021/nn5056496
added
19-Mar-15
2. Title: High-K materials and metal gates for CMOS applications
Author(s): Robertson, J.; Wallace, R. M.
Source: Materials Science & Engineering R-Reports Volume: 88 Pages: 1-41 Published: 2015
Times Cited: 0
DOI: 10.1016/j.mser.2014.11.001
added
19-Mar-15
3. Title: Highly Scalable, Atomically Thin WSe2 Grown via Metal-Organic Chemical Vapor Deposition
Author(s): Eichfeld, S. M.; Hossain, L.; Lin, Y. C.; et al.
Source: Acs Nano Volume: 9 Issue: 2 Pages: 2080-2087 Published: 2015
Times Cited: 0
DOI: 10.1021/nn5073286
added
19-Mar-15
4. Title: In Situ TEM Characterization of Shear-Stress-Induced Interlayer Sliding in the Cross Section View of Molybdenum Disulfide
Author(s): Oviedo, J. P.; Santosh, K. C.; Lu, N.; et al.
Source: Acs Nano Volume: 9 Issue: 2 Pages: 1543-1551 Published: 2015
Times Cited: 0
DOI: 10.1021/nn506052d
added
19-Mar-15
5. Title: Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors
Author(s): Makela, J.; Tuominen, M.; Kuzmin, M.; et al.
Source: Applied Surface Science Volume: 329 Pages: 371-375 Published: 2015
Times Cited: 0
DOI: 10.1016/j.apsusc.2014.12.155
added
19-Mar-15
6. Title: Seeding Atomic Layer Deposition of Alumina on Graphene with Yttria
Author(s): Dahal, A.; Addou, R.; Azcatl, A.; et al.
Source: Acs Applied Materials & Interfaces Volume: 7 Issue: 3 Pages: 2082-2087 Published: 2015
Times Cited: 0
DOI: 10.1021/am508154n
added
19-Mar-15
7. Title: A crystalline oxide passivation for Al2O3/AlGaN/GaN
Author(s): Qin, Xiaoye; Dong, Hong; Kim, Jiyoung; et al.
Source: Applied Physics Letters Volume: 105 Issue: 14 Published: OCT 6 2014
Times Cited: 0
DOI: 10.1063/1.4897641
added
05-Jan-15
8. Title: Ab initio Study of H-2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2x1) Surfaces
Author(s): Longo, R. C.; Owen, J. H. G.; McDonnell, S.; et al.
Source: Journal of Physical Chemistry C Volume: 118 Issue: 19 Pages: 10088-10096 Published: MAY 15 2014
Times Cited: 0
DOI: 10.1021/jp411903z
added
05-Jan-15
9. Title: Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
Author(s): Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; et al.
Source: Journal of Applied Physics Volume: 116 Issue: 1 Published: JUL 7 2014
Times Cited: 2
DOI: 10.1063/1.4886715
added
05-Jan-15
10. Title: Air Stable p-Doping of WSe2 by Covalent Functionalization
Author(s): Zhao, Peida; Kiriya, Daisuke; Azcatl, Angelica; et al.
Source: Acs Nano Volume: 8 Issue: 10 Pages: 10808-10814 Published: OCT 2014
Times Cited: 1
DOI: 10.1021/nn5047844
added
05-Jan-15
publication(s)  
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