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Wallace, Robert M
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ResearcherID: A-5283-2008
URL: http://www.researcherid.com/rid/A-5283-2008
Subject: Engineering; Materials Science; Physics
ORCID: http://orcid.org/0000-0001-5566-4806
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This list contains papers that I have authored.

publication(s)  
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1. Title: Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study
Author(s): Zhu, Hui; McDonnell, Stephen; Qin, Xiaoye; et al.
Source: Acs Applied Materials & Interfaces Volume: 7 Issue: 23 Pages: 13038-13043 Published: JUN 17 2015
Times Cited: 0
DOI: 10.1021/acsami.5b03192
added
06-Aug-15
2. Title: Al2O3 on Black Phosphorus by Atomic Layer Deposition: An in Situ Interface Study.
Author(s): Zhu, Hui; McDonnell, Stephen; Qin, Xiaoye; et al.
Source: ACS applied materials & interfaces Volume: 7 Issue: 23 Pages: 13038-43 Published: 2015-Jun-17
DOI: 10.1021/acsami.5b03192
added
08-Jul-15
3. Title: Atomically thin resonant tunnel diodes built from synthetic van der Waals heterostructures
Author(s): Lin, Yu-Chuan; Ghosh, Ram Krishna; Addou, Rafik; et al.
Source: Nature Communications Volume: 6 Published: JUN 2015
Times Cited: 0
DOI: 10.1038/ncomms8311
added
06-Aug-15
4. Title: HfO2 on UV-O-3 exposed transition metal dichalcogenides: interfacial reactions study
Author(s): Azcatl, Angelica; Santosh, K. C.; Peng, Xin; et al.
Source: 2d Materials Volume: 2 Issue: 1 Published: MAR 2015
Times Cited: 1
DOI: 10.1088/2053-1583/2/1/014004
added
06-Aug-15
5. Title: HfSe2 Thin Films: 2D Transition Metal Dichalcogenides Grown by Molecular Beam Epitaxy
Author(s): Yue, R. Y.; Barton, A. T.; Zhu, H.; et al.
Source: Acs Nano Volume: 9 Issue: 1 Pages: 474-480 Published: 2015
Times Cited: 3
DOI: 10.1021/nn5056496
added
19-Mar-15
6. Title: High-K materials and metal gates for CMOS applications
Author(s): Robertson, J.; Wallace, R. M.
Source: Materials Science & Engineering R-Reports Volume: 88 Pages: 1-41 Published: 2015
Times Cited: 3
DOI: 10.1016/j.mser.2014.11.001
added
19-Mar-15
7. Title: Highly Scalable, Atomically Thin WSe2 Grown via Metal-Organic Chemical Vapor Deposition
Author(s): Eichfeld, S. M.; Hossain, L.; Lin, Y. C.; et al.
Source: Acs Nano Volume: 9 Issue: 2 Pages: 2080-2087 Published: 2015
Times Cited: 3
DOI: 10.1021/nn5073286
added
19-Mar-15
8. Title: In Situ TEM Characterization of Shear-Stress-Induced Interlayer Sliding in the Cross Section View of Molybdenum Disulfide
Author(s): Oviedo, J. P.; Santosh, K. C.; Lu, N.; et al.
Source: Acs Nano Volume: 9 Issue: 2 Pages: 1543-1551 Published: 2015
Times Cited: 3
DOI: 10.1021/nn506052d
added
19-Mar-15
9. Title: Line shape and composition of the In 3d(5/2) core-level photoemission for the interface analysis of In-containing III-V semiconductors
Author(s): Makela, J.; Tuominen, M.; Kuzmin, M.; et al.
Source: Applied Surface Science Volume: 329 Pages: 371-375 Published: 2015
Times Cited: 0
DOI: 10.1016/j.apsusc.2014.12.155
added
19-Mar-15
10. Title: Low temperature synthesis of graphite on Ni films using inductively coupled plasma enhanced CVD
Author(s): Cheng, Lanxia; Yun, Kayoung; Lucero, Antonio; et al.
Source: Journal of Materials Chemistry C Volume: 3 Issue: 20 Pages: 5192-5198 Published: 2015
Times Cited: 0
DOI: 10.1039/c5tc00635j
added
06-Aug-15
publication(s)  
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