ResearcherID.com
ResearcherID Thomson Reuters  

Wallace, Robert M
Create a ResearcherID badge for this researcher View publications analytics for this researcher
Close
ResearcherID: A-5283-2008
URL: http://www.researcherid.com/rid/A-5283-2008
Subject: Engineering; Materials Science; Physics
ORCID: http://orcid.org/0000-0001-5566-4806
My Institutions (more details)
Primary Institution:
Sub-org/Dept:
Role:
 
 

This list contains papers that I have authored.

publication(s)  
First Page Previous Page Page   of  22  Go Next Page Last Page
  Sort by:    Results per page: 
1. Title: A density-functional theory study of tip electronic structures in scanning tunneling microscopy
Author(s): Choi, Heesung; Longo, Roberto C.; Huang, Min; et al.
Source: Nanotechnology Volume: 24 Issue: 10 Published: MAR 15 2013
Times Cited: 2
DOI: 10.1088/0957-4484/24/10/105201
added
26-Jun-13
2. Title: Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors
Author(s): Gong, Cheng; Zhang, Hengji; Wang, Weihua; et al.
Source: Applied Physics Letters Volume: 103 Issue: 5 Published: JUL 29 2013
Times Cited: 14
DOI: 10.1063/1.4817409
added
14-Oct-13
3. Title: Electrical and chemical characteristics of Al2O3/InP metal-oxide-semiconductor capacitors
Author(s): Galatage, R. V.; Dong, H.; Zhernokletov, D. M.; et al.
Source: Applied Physics Letters Volume: 102 Issue: 13 Published: APR 1 2013
Times Cited: 7
DOI: 10.1063/1.4799660
added
26-Jun-13
4. Title: Encapsulation of high frequency organic Schottky diodes
Author(s): Ai, Yuming; Gowrisanker, Srinivas; Jia, Huiping; et al.
Source: Thin Solid Films Volume: 531 Pages: 509-512 Published: MAR 15 2013
Times Cited: 0
DOI: 10.1016/j.tsf.2012.12.117
added
14-Oct-13
5. Title: First principles study on InP (001)-(2 x 4) surface oxidation
Author(s): Santosh, K. C.; Wang, Weichao; Dong, Hong; et al.
Source: Journal of Applied Physics Volume: 113 Issue: 10 Published: MAR 14 2013
Times Cited: 3
DOI: 10.1063/1.4794826
added
26-Jun-13
6. Title: Graphene Growth and Device Integration
Author(s): Colombo, Luigi; Wallace, Robert M.; Ruoff, Rodney S.
Source: Proceedings of the Ieee Volume: 101 Issue: 7 Pages: 1536-1556 Published: JUL 2013
Times Cited: 7
DOI: 10.1109/JPROC.2013.2260114
added
14-Oct-13
7. Title: In situ atomic layer deposition study of HfO2 growth on NH4OH and atomic hydrogen treated Al0.25Ga0.75N
Author(s): Qin, Xiaoye; Brennan, Barry; Dong, Hong; et al.
Source: Journal of Applied Physics Volume: 113 Issue: 24 Published: JUN 28 2013
Times Cited: 4
DOI: 10.1063/1.4812243
added
14-Oct-13
8. Title: In situ study of HfO2 atomic layer deposition on InP(100)
Author(s): Dong, H.; Brennan, B.; Zhernokletov, D.; et al.
Source: Applied Physics Letters Volume: 102 Issue: 17 Published: APR 29 2013
Times Cited: 10
DOI: 10.1063/1.4803486
added
26-Jun-13
9. Title: In-situ studies of III-V surfaces and high-k atomic layer deposition
Author(s): Brennan, B.; McDonnell, S.; Zhernokletov, D.; et al.
Source: Ultra Clean Processing of Semiconductor Surfaces Xi Volume: 195 Pages: 90-94 Published: 2013
Times Cited: 0
DOI: 10.4028/www.scientific.net/SSP.195.90
added
26-Jun-13
10. Title: Indium diffusion through high-k dielectrics in high-k/InP stacks
Author(s): Dong, H.; Cabrera, W.; Galatage, R. V.; et al.
Source: Applied Physics Letters Volume: 103 Issue: 6 Published: AUG 5 2013
Times Cited: 6
DOI: 10.1063/1.4817932
added
14-Oct-13
publication(s)  
First Page Previous Page Page   of  22  Go Next Page Last Page
  Sort by:    Results per page: