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Wallace, Robert M
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ResearcherID: A-5283-2008
URL: http://www.researcherid.com/rid/A-5283-2008
Subject: Engineering; Materials Science; Physics
ORCID: http://orcid.org/0000-0001-5566-4806
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This list contains papers that I have authored.

publication(s)  
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1. Title: A crystalline oxide passivation for Al2O3/AlGaN/GaN
Author(s): Qin, Xiaoye; Dong, Hong; Kim, Jiyoung; et al.
Source: Applied Physics Letters Volume: 105 Issue: 14 Published: OCT 6 2014
Times Cited: 0
DOI: 10.1063/1.4897641
added
05-Jan-15
2. Title: Ab initio Study of H-2 Associative Desorption on Ad-Dimer Reconstructed Si(001) and Ge(001)-(2x1) Surfaces
Author(s): Longo, R. C.; Owen, J. H. G.; McDonnell, S.; et al.
Source: Journal of Physical Chemistry C Volume: 118 Issue: 19 Pages: 10088-10096 Published: MAY 15 2014
Times Cited: 0
DOI: 10.1021/jp411903z
added
05-Jan-15
3. Title: Accumulation capacitance frequency dispersion of III-V metal-insulator-semiconductor devices due to disorder induced gap states
Author(s): Galatage, R. V.; Zhernokletov, D. M.; Dong, H.; et al.
Source: Journal of Applied Physics Volume: 116 Issue: 1 Published: JUL 7 2014
Times Cited: 2
DOI: 10.1063/1.4886715
added
05-Jan-15
4. Title: Air Stable p-Doping of WSe2 by Covalent Functionalization
Author(s): Zhao, Peida; Kiriya, Daisuke; Azcatl, Angelica; et al.
Source: Acs Nano Volume: 8 Issue: 10 Pages: 10808-10814 Published: OCT 2014
Times Cited: 0
DOI: 10.1021/nn5047844
added
05-Jan-15
5. Title: Atomic Layer Deposition of a High-k Dielectric on MoS2 Using Trimethylaluminum and Ozone
Author(s): Cheng, Lanxia; Qin, Xiaoye; Lucero, Antonio T.; et al.
Source: Acs Applied Materials & Interfaces Volume: 6 Issue: 15 Pages: 11834-11838 Published: AUG 13 2014
Times Cited: 0
DOI: 10.1021/am5032105
added
05-Jan-15
6. Title: Atomically Thin Heterostructures Based on Single-Layer Tungsten Diselenide and Graphene
Author(s): Lin, Yu-Chuan; Chang, Chih-Yuan S.; Ghosh, Ram Krishna; et al.
Source: Nano Letters Volume: 14 Issue: 12 Pages: 6936-6941 Published: DEC 2014
Times Cited: 0
DOI: 10.1021/nl503144a
added
22-Jan-15
7. Title: Atomically thin heterostructures based on single-layer tungsten diselenide and graphene.
Author(s): Lin, Yu-Chuan; Chang, Chih-Yuan S; Ghosh, Ram Krishna; et al.
Source: Nano letters Volume: 14 Issue: 12 Pages: 6936-41 Published: 2014-Dec-10
DOI: 10.1021/nl503144a
added
05-Jan-15
8. Title: Defect-Dominated Doping and Contact Resistance in MoS2
Author(s): McDonnell, Stephen; Addou, Rafik; Buie, Creighton; et al.
Source: Acs Nano Volume: 8 Issue: 3 Pages: 2880-2888 Published: MAR 2014
Times Cited: 23
DOI: 10.1021/nn500044q
added
05-Jan-15
9. Title: Diffusion of In0.53Ga0.47As elements through hafnium oxide during post deposition annealing
Author(s): Cabrera, W.; Brennan, B.; Dong, H.; et al.
Source: Applied Physics Letters Volume: 104 Issue: 1 Published: JAN 6 2014
Times Cited: 3
DOI: 10.1063/1.4860960
added
05-Jan-15
10. Title: Digermane Deposition on Si(100) and Ge(100): from Adsorption Mechanism to Epitaxial Growth
Author(s): Dick, Don; Veyan, Jean-Francois; Longo, R. C.; et al.
Source: Journal of Physical Chemistry C Volume: 118 Issue: 1 Pages: 482-493 Published: JAN 9 2014
Times Cited: 0
DOI: 10.1021/jp410145u
added
05-Jan-15
publication(s)  
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