ResearcherID Thomson Reuters  

Son, Nguyen Tien
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ResearcherID: C-5551-2013
Other Names: Son, N.T.
URL: http://www.researcherid.com/rid/C-5551-2013
Subject: Materials Science; Physics
ORCID: http://orcid.org/0000-0002-6810-4282
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Department of Physics, Chemistry and Biology
Role:
My URLs: http://www.ifm.liu.se/materialphysics/semicond/staff/nguyen-tien-son/
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: First principles predictions of magneto-optical data for semiconductor point defect identification: the case of divacancy defects in 4H–SiC
 Author(s): Joel Davidsson and Viktor Ivády and Rickard Armiento and, N. T. Son and Adam Gali and Igor A. Abrikosov
 Source: New Journal of Physics Volume: 20 Issue: 2 Pages: 023035 Published: 2018
 Author-provided URL : http://stacks.iop.org/1367-2630/20/i=2/a=023035
added
24-Feb-18
2.  Title: Identification of Si-vacancy related room-temperature qubits in $4H$ silicon carbide
 Author(s): Ivády, Viktor; Davidsson, Joel; Son, Nguyen Tien; et al.
 Source: Physical Review B Volume: 96 Issue: 16 Pages: 161114 Published: 2017
 Author-provided URL : https://link.aps.org/doi/10.1103/PhysRevB.96.161114
added
28-Oct-17
3.  Title: Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
 Author(s): Christle, David J.; Klimov, Paul V.; de las Casas, Charles F.; et al.
 Source: Physical Review X Volume: 7 Issue: 2 Pages: 021046 Published: 2017
 Author-provided URL : https://link.aps.org/doi/10.1103/PhysRevX.7.021046
added
26-Jun-17
4.  Title: Origin of orange color in nominally undoped HVPE GaN crystals
 Author(s): Zimmermann, F.; Beyer, F. C.; Gärtner, G.; et al.
 Source: Optical Materials Volume: 70 Pages: 127-130 Published: 2017
 DOI: https://doi.org/10.1016/j.optmat.2017.05.020 /  Author-provided URL : http://www.sciencedirect.com/science/article/pii/S0925346717303051
added
01-Jun-17
5.  Title: Resonant optical spectroscopy and coherent control of Cr4+ spin ensembles in SiC and GaN
 Author(s): Koehl, William F.; Diler, Berk; Whiteley, Samuel J.; et al.
 Source: Physical Review B Volume: 95 Issue: 3 Published: JAN 19 2017
 Times Cited: 5
 DOI: 10.1103/PhysRevB.95.035207
added
27-May-17
6.  Title: Scalable Quantum Photonics with Single Color Centers in Silicon Carbide
 Author(s): Radulaski, Marina; Widmann, Matthias; Niethammer, Matthias; et al.
 Source: Nano Letters Volume: 17 Issue: 3 Pages: 1782-1786 Published: MAR 2017
 Times Cited: 8
 DOI: 10.1021/acs.nanolett.6b05102
added
27-May-17
7.  Title: Stark tuning and electrical charge state control of single divacancies in silicon carbide
 Author(s): de las Casas, Charles F.; Christle, David J.; Hassan, Jawad Ul; et al.
 Source: Applied Physics Letters Volume: 111 Issue: 26 Published: DEC 25 2017
 Times Cited: 0
 DOI: 10.1063/1.5004174
added
27-Jan-18
8.  Title: Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy
 Author(s): Duc, T. T.; Pozina, G.; Son, N. T.; et al.
 Source: Journal of Applied Physics Volume: 119 Issue: 9 Published: 2016
 Times Cited: 0
 DOI: 10.1063/1.4943029
added
14-Nov-16
9.  Title: Donor and double-donor transitions of the carbon vacancy related EH6/7 deep level in 4H-SiC
 Author(s): Booker, I. D.; Janzen, E.; Son, N. T.; et al.
 Source: Journal of Applied Physics Volume: 119 Issue: 23 Published: 2016
 Times Cited: 2
 DOI: 10.1063/1.4954006
added
14-Nov-16
10.  Title: Electronic properties of defects in high-fluence electron-irradiated bulk GaN
 Author(s): Tran Thien, Duc; Pozina, Galia; Nguyen Tien, Son; et al.
 Source: Physica Status Solidi B-Basic Solid State Physics Volume: 253 Issue: 3 Pages: 521-526 Published: 2016
 Times Cited: 0
 DOI: 10.1002/pssb.201552521
added
20-Jun-16
publication(s)  
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