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TANIGUCHI, Takashi
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ResearcherID: H-2718-2011
Other Names: 谷口 尚
URL: http://www.researcherid.com/rid/H-2718-2011
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Ultra-High Pressure Processes Group, Materials Processing Unit, Advanced Key Technologies Division
Role:
My URLs: http://samurai.nims.go.jp/TANIGUCHI_Takashi-e.html
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Band gap and broken chirality in single-layer and bilayer graphene
 Author(s): Varlet, A.; Liu, M. H.; Bischoff, D.; et al.
 Source: Physica Status Solidi-Rapid Research Letters Volume: 10 Issue: 1 Pages: 46-57 Published: 2016
 Times Cited: 3
 DOI: 10.1002/pssr.201510180
added
04-Jul-16
2.  Title: Conductance Quantization at Zero Magnetic Field in InSb Nanowires
 Author(s): Kammhuber, J.; Cassidy, M. C.; Zhang, H.; et al.
 Source: Nano Letters Volume: 16 Issue: 6 Pages: 3482-3486 Published: 2016
 Times Cited: 15
 DOI: 10.1021/acs.nanolett.6b00051
added
04-Jul-16
3.  Title: Electron Doping of Ultrathin Black Phosphorus with Cu Adatoms
 Author(s): Koenig, S. P.; Doganov, R. A.; Seixas, L.; et al.
 Source: Nano Letters Volume: 16 Issue: 4 Pages: 2145-2151 Published: 2016
 Times Cited: 13
 DOI: 10.1021/acs.nanolett.5b03278
added
04-Jul-16
4.  Title: Enhanced Thermoelectric Power in Graphene: Violation of the Mott Relation by Inelastic Scattering
 Author(s): Ghahari, F.; Xie, H. Y.; Taniguchi, T.; et al.
 Source: Physical Review Letters Volume: 116 Issue: 13 Pages: 5 Published: 2016
 Times Cited: 12
 DOI: 10.1103/PhysRevLett.116.136802
added
04-Jul-16
5.  Title: Excitonic luminescence upconversion in a two-dimensional semiconductor
 Author(s): Jones, A. M.; Yu, H. Y.; Schaibley, J. R.; et al.
 Source: Nature Physics Volume: 12 Issue: 4 Pages: 323-U157 Published: 2016
 Times Cited: 20
 DOI: 10.1038/nphys3604
added
04-Jul-16
6.  Title: Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states (vol 106, 152104, 2015)
 Author(s): Wang, J. J.; Rhodes, D.; Feng, S. M.; et al.
 Source: Applied Physics Letters Volume: 108 Issue: 6 Pages: 1 Published: 2016
 Times Cited: 0
 DOI: 10.1063/1.4941993
added
04-Jul-16
7.  Title: Graphene nanoribbons epitaxy on boron nitride
 Author(s): Lu, X. B.; Yang, W.; Wang, S. P.; et al.
 Source: Applied Physics Letters Volume: 108 Issue: 11 Pages: 5 Published: 2016
 Times Cited: 0
 DOI: 10.1063/1.4943940
added
04-Jul-16
8.  Title: High Responsivity Phototransistors Based on Few-Layer ReS2 for Weak Signal Detection
 Author(s): Liu, E. F.; Long, M. S.; Zeng, J. W.; et al.
 Source: Advanced Functional Materials Volume: 26 Issue: 12 Pages: 1938-1944 Published: 2016
 Times Cited: 24
 DOI: 10.1002/adfm.201504408
added
04-Jul-16
9.  Title: High temperature MBE of graphene on sapphire and hexagonal boron nitride flakes on sapphire
 Author(s): Cheng, T. S.; Davies, A.; Summerfield, A.; et al.
 Source: Journal of Vacuum Science & Technology B Volume: 34 Issue: 2 Pages: 6 Published: 2016
 Times Cited: 2
 DOI: 10.1116/1.4938157
added
04-Jul-16
10.  Title: Hofstadter Butterfly and Many-Body Effects in Epitaxial Graphene Superlattice
 Author(s): Yang, W.; Lu, X. B.; Chen, G. R.; et al.
 Source: Nano Letters Volume: 16 Issue: 4 Pages: 2387-2392 Published: 2016
 Times Cited: 4
 DOI: 10.1021/acs.nanolett.5b05161
added
04-Jul-16
publication(s)  
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