ResearcherID Thomson Reuters  

Ide, Keisuke
Create a ResearcherID badge for this researcher View publications analytics for this researcher
Close
ResearcherID: A-1614-2015
URL: http://www.researcherid.com/rid/A-1614-2015
ORCID: http://orcid.org/0000-0003-2197-6611
My Institutions (more details)
Primary Institution:
Sub-org/Dept:
Role:
 
 

This list contains papers that I have authored.

publication(s)  
First Page Previous Page Page   of  1  Go Next Page Last Page
  Sort by:    Results per page: 
1.  Title: Light Irradiation and Applied Voltage History Sensors using Amorphous In-Ga-Zn-O Thin-Film Transistors exposed to Ozone Annealing and fabricated under High Oxygen Pressure
 Author(s): Kimura, Mutsumi; Hasegawa, Takayuki; Matsuda, Tokiyoshi; et al.
 Source: 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (Am-Fpd) Pages: 319-322 Published: 2014
 Times Cited: 0
added
08-Jan-15
2.  Title: Effects of low-temperature ozone annealing on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
 Author(s): Ide, Keisuke; Kikuchi, Yutomo; Nomura, Kenji; et al.
 Source: Thin Solid Films Volume: 520 Issue: 10 Pages: 3787-3790 Published: MAR 1 2012
 Times Cited: 17
 DOI: 10.1016/j.tsf.2011.10.062
added
08-Jan-15
3.  Title: Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Exposed to Ozone Annealing
 Author(s): Kimura, Mutsumi; Hasegawa, Takayuki; Ide, Keisuke; et al.
 Source: Ieee Electron Device Letters Volume: 33 Issue: 3 Pages: 384-386 Published: MAR 2012
 Times Cited: 6
 DOI: 10.1109/LED.2011.2179111
added
08-Jan-15
4.  Title: Light Irradiation History Sensor Using Amorphous In-Ga-Zn-O Thin-Film Transistor Fabricated by High Oxygen Partial Pressure Sputtering
 Author(s): Hasegwa, Takayuki; Kimura, Mutsumi; Ide, Keisuke; et al.
 Source: 2012 19th International Workshop on Active-Matrix Flatpanel Displays and Devices (Am-Fpd): Tft Technologies and Fpd Materials Pages: 41-42 Published: 2012
 Times Cited: 0
added
08-Jan-15
5.  Title: Maximum applied voltage detector using amorphous In-Ga-Zn-O thin-film transistor exposed to ozone annealing
 Author(s): Kimura, Mutsumi; Hasegawa, Takayuki; Ide, Keisuke; et al.
 Source: Solid-State Electronics Volume: 75 Pages: 74-76 Published: SEP 2012
 Times Cited: 7
 DOI: 10.1016/j.sse.2012.04.037
added
08-Jan-15
6.  Title: Structural relaxation in amorphous oxide semiconductor, a-In-Ga-Zn-O
 Author(s): Ide, Keisuke; Nomura, Kenji; Hiramatsu, Hidenori; et al.
 Source: Journal of Applied Physics Volume: 111 Issue: 7 Published: APR 1 2012
 Times Cited: 39
 DOI: 10.1063/1.3699372
added
08-Jan-15
7.  Title: Effects of excess oxygen on operation characteristics of amorphous In-Ga-Zn-O thin-film transistors
 Author(s): Ide, Keisuke; Kikuchi, Yutomo; Nomura, Kenji; et al.
 Source: Applied Physics Letters Volume: 99 Issue: 9 Published: AUG 29 2011
 Times Cited: 85
 DOI: 10.1063/1.3633100
added
08-Jan-15
publication(s)  
First Page Previous Page Page   of  1  Go Next Page Last Page
  Sort by:    Results per page: