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WU, YUH-RENN
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ResearcherID: A-1052-2011
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URL: http://www.researcherid.com/rid/A-1052-2011
Subject: Engineering; Physics
Keywords: gan; light emitting diode (led); monte carlo; monte carlo simulation of electron scattering; monte carlo simulations; hfet; hemt; ferro-electric
ORCID: http://orcid.org/0000-0002-1457-3681
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My URLs: http://yrwu-wk.ee.ntu.edu.tw
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting
 Author(s): Wu, YR; Lin, YY; Huang, HH; et al.
 Source: Journal of Applied Physics Volume: 105 Issue: 1 Published: 2009
 Times Cited: 60
 DOI: 10.1063/1.3065274
added
02-Jan-11
2.  Title: Study on the Current Spreading Effect and Light Extraction Enhancement of Vertical GaN/InGaN LEDs
 Author(s): Li, Chi-Kang; Wu, Yuh-Renn
 Source: Ieee Transactions on Electron Devices Volume: 59 Issue: 2 Pages: 400-407 Published: FEB 2012
 Times Cited: 57
 DOI: 10.1109/TED.2011.2176132
added
12-Jul-12
3.  Title: Real-time observation of ripple structure formation on a diamond surface under focused ion-beam bombardment
 Author(s): Datta, A; Wu, YR; Wang, YL
 Source: Physical Review B Volume: 63 Issue: 12 Pages: art. no.-125407 Published: MAR 15 2001
 Times Cited: 56
 DOI: 10.1103/PhysRevB.63.125407
added
02-Jan-11
4.  Title: Analyzing the physical properties of InGaN multiple quantum well light emitting diodes from nano scale structure
 Author(s): Wu, Yuh-Renn; Shivaraman, Ravi; Wang, Kuang-Chung; et al.
 Source: Applied Physics Letters Volume: 101 Issue: 8 Published: 2012
 Times Cited: 56
 DOI: 10.1063/1.4747532
added
01-Dec-12
5.  Title: Size-Dependent Strain Relaxation and Optical Characteristics of InGaN/GaN Nanorod LEDs
 Author(s): Wu, YR; Chiu, CH; Chang, CY; et al.
 Source: Ieee Journal of Selected Topics in Quantum Electronics Volume: 15 Issue: 4 Pages: 1226-1233 Published: 2009
 Times Cited: 51
 DOI: 10.1109/JSTQE.2009.2015583
added
02-Jan-11
6.  Title: Strain-enhanced photoluminescence from Ge direct transition
 Author(s): Cheng, TH; Peng, KL; Ko, CY; et al.
 Source: Applied Physics Letters Volume: 96 Issue: 21 Published: 2010
 Times Cited: 47
 DOI: 10.1063/1.3429085
added
02-Jan-11
7.  Title: The influence of random indium alloy fluctuations in indium gallium nitride quantum wells on the device behavior
 Author(s): Yang, Tsung-Jui; Shivaraman, Ravi; Speck, James S.; et al.
 Source: Journal of Applied Physics Volume: 116 Issue: 11 Published: 2014
 Times Cited: 44
 DOI: 10.1063/1.4896103
added
13-Dec-14
8.  Title: Study of polarization properties of light emitted from a-plane InGaN/GaN quantum well-based light emitting diodes
 Author(s): Huang, HH; Wu, YR
 Source: Journal of Applied Physics Volume: 106 Issue: 2 Published: 2009
 Times Cited: 41
 DOI: 10.1063/1.3176964
added
02-Jan-11
9.  Title: Device scaling physics and channel velocities in AlGaN/GaN HFETs: Velocities and effective gate length
 Author(s): Wu, YR; Singh, M; Singh, J
 Source: Ieee Transactions on Electron Devices Volume: 53 Issue: 4 Pages: 588-593 Published: APR 2006
 Times Cited: 37
 DOI: 10.1109/TED.2006.870571
added
02-Jan-11
10.  Title: Capacitance-voltage characteristics of BiFeO3/SrTiO3/GaN heteroepitaxial structures
 Author(s): Yang, SY; Zhan, Q; Yang, PL; et al.
 Source: Applied Physics Letters Volume: 91 Issue: 2 Published: JUL 9 2007
 Times Cited: 37
 DOI: 10.1063/1.2757089
added
02-Jan-11
publication(s)  
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