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Ul Hassan, Jawad
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ResearcherID: C-7415-2013
Other Names: J. Hassan; Jawad ul Hassan; Jawad-ul-Hassan; Ul-Hassan J; J. Ul Hassan; Jawad Ul Hassan
E-mail:
URL: http://www.researcherid.com/rid/C-7415-2013
Subject: Crystallography; Materials Science; Physics
Keywords: sic; epitaxial growth; graphene; crystal defects
ORCID: http://orcid.org/0000-0001-9537-2226
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Department of Physics, Chemistry and Biology. IFM
Role:
Description:
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: (Invited) Silicon Carbide as a Robust Neural Interface
 Author(s): Frewin, Christopher L; Bernardin, Evans E; Deku, Felix; et al.
 Source: ECS Transactions Volume: 75 Issue: 12 Pages: 39-45 Published: 2016
added
28-Feb-17
2.  Title: Chloride-based SiC growth on a-axis 4H-SiC substrates
 Author(s): Booker, Ian D.; Farkas, Ildiko; Ivanov, Ivan G.; et al.
 Source: Physica B-Condensed Matter Volume: 480 Pages: 23-25 Published: JAN 1 2016
 Times Cited: 0
 DOI: 10.1016/j.physb.2015.08.038 /  Author-provided URL : http://ac.els-cdn.com/S0921452615301885/1-s2.0-S0921452615301885-main.pdf?_tid=a ...
added
14-Sep-16
3.  Title: Development of an all-SiC neuronal interface device
 Author(s): Bernardin, Evans; Frewin, Christopher L.; Dey, Abhishek; et al.
 Source: MRS Advances Volume: 1 Issue: 55 Pages: 3679-3684 Published: 2016/001/001
 DOI: 10.1557/adv.2016.360 /  Author-provided URL : https://www.cambridge.org/core/article/div-class-title-development-of-an-all-sic ... https://www.cambridge.org/core/journals/mrs-advances/article/div-classtitledevel ... https://www.cambridge.org/core/journals/mrs-advances/article/development-of-an-a ...
added
28-Feb-17
4.  Title: Donor and double-donor transitions of the carbon vacancy related EH6/7 deep level in 4H-SiC
 Author(s): Booker, I. D.; Janzen, E.; Son, N. T.; et al.
 Source: Journal of Applied Physics Volume: 119 Issue: 23 Published: JUN 21 2016
 Times Cited: 1
 DOI: 10.1063/1.4954006 /  Author-provided URL : http://scitation.aip.org/docserver/fulltext/aip/journal/jap/119/23/1.4954006.pdf ...
added
14-Sep-16
5.  Title: Oxidation-Induced Deep Levels in n- and p-Type 4H- and 6H-SiC and Their Influence on Carrier Lifetime
 Author(s): Booker, I. D.; Abdalla, H.; Hassan, J.; et al.
 Source: Physical Review Applied Volume: 6 Issue: 1 Published: JUL 19 2016
 Times Cited: 0
 DOI: 10.1103/PhysRevApplied.6.014010 /  Author-provided URL : http://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.6.014010
added
14-Sep-16
6.  Title: Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies
 Author(s): Winters, M.; Habibpour, O.; Ivanov, I. G.; et al.
 Source: Carbon Volume: 81 Pages: 96-104 Published: 2015
 Times Cited: 5
 DOI: 10.1016/j.carbon.2014.09.029 /  Author-provided URL : http://ac.els-cdn.com/S0008622314008811/1-s2.0-S0008622314008811-main.pdf?_tid=c ...
added
29-Mar-15
7.  Title: Conductivity Modulated On-axis 4H-SiC 10+kV PiN Diodes
 Author(s): Salemi, A.; Elahipanah, H.; Buono, B.; et al.
 Source: 2015 Ieee 27th International Symposium on Power Semiconductor Devices & Ic's (Ispsd) Pages: 269-272 Published: 2015
 Times Cited: 3
added
28-Feb-17
8.  Title: Graphene self-switching diodes as zero-bias microwave detectors
 Author(s): Westlund, A.; Winters, M.; Ivanov, I. G.; et al.
 Source: Applied Physics Letters Volume: 106 Issue: 9 Published: 2015
 Times Cited: 6
 DOI: 10.1063/1.4914356 /  Author-provided URL : http://scitation.aip.org/docserver/fulltext/aip/journal/apl/106/9/1.4914356.pdf? ...
added
20-Jul-15
9.  Title: In-grown stacking-faults in 4H-SiC epilayers grown on 2 degrees off-cut substrates
 Author(s): Lilja, Louise; Ul Hassan, Jawad; Janzen, Erik; et al.
 Source: Physica Status Solidi B-Basic Solid State Physics Volume: 252 Issue: 6 Pages: 1319-1324 Published: 2015
 Times Cited: 0
 DOI: 10.1002/pssb.201451710 /  Author-provided URL : http://onlinelibrary.wiley.com/store/10.1002/pssb.201451710/asset/pssb201451710. ...
added
20-Jul-15
10.  Title: Isolated electron spins in silicon carbide with millisecond coherence times
 Author(s): Christle, David J.; Falk, Abram L.; Andrich, Paolo; et al.
 Source: Nature Materials Volume: 14 Issue: 2 Pages: 160-163 Published: FEB 2015
 Times Cited: 71
 DOI: 10.1038/NMAT4144 /  Author-provided URL : http://www.nature.com/nmat/journal/v14/n2/pdf/nmat4144.pdf
added
25-Mar-15
publication(s)  
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