ResearcherID Thomson Reuters  

Ul Hassan, Jawad
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ResearcherID: C-7415-2013
Other Names: J. Hassan; Jawad ul Hassan; Jawad-ul-Hassan; Ul-Hassan J; J. Ul Hassan; Jawad Ul Hassan
E-mail:
URL: http://www.researcherid.com/rid/C-7415-2013
Subject: Crystallography; Materials Science; Physics
Keywords: sic; epitaxial growth; graphene; crystal defects
ORCID: http://orcid.org/0000-0001-9537-2226
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Department of Physics, Chemistry and Biology. IFM
Role:
Description:
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC
 Author(s): Khosa, R. Y.; Thorsteinsson, E. B.; Winters, M.; et al.
 Source: Aip Advances Volume: 8 Issue: 2 Published: FEB 2018
 Times Cited: 0
 DOI: 10.1063/1.5021411
added
05-Apr-18
2.  Title: Isolated Spin Qubits in SiC with a High-Fidelity Infrared Spin-to-Photon Interface
 Author(s): Christle, D. J.; Klimov, P. V.; Casas, C. F. D. L.; et al.
 Source: Physical Review X Volume: 7 Issue: 2 Published: 2017
 Times Cited: 11
 DOI: ARTN 021046 10.1103/PhysRevX.7.021046
added
09-Feb-18
3.  Title: Stark tuning and electrical charge state control of single divacancies in silicon carbide
 Author(s): de las Casas, C. F.; Christle, D. J.; Hassan, J. U.; et al.
 Source: Applied Physics Letters Volume: 111 Issue: 26 Published: 2017
 Times Cited: 0
 DOI: Artn 262403 10.1063/1.5004174
added
09-Feb-18
4.  Title: (Invited) Silicon Carbide as a Robust Neural Interface
 Author(s): Frewin, Christopher L; Bernardin, Evans E; Deku, Felix; et al.
 Source: ECS Transactions Volume: 75 Issue: 12 Pages: 39-45 Published: 2016
added
28-Feb-17
5.  Title: Chloride-based SiC growth on a-axis 4H-SiC substrates
 Author(s): Booker, Ian D.; Farkas, Ildiko; Ivanov, Ivan G.; et al.
 Source: Physica B-Condensed Matter Volume: 480 Pages: 23-25 Published: JAN 1 2016
 Times Cited: 0
 DOI: 10.1016/j.physb.2015.08.038 /  Author-provided URL : http://ac.els-cdn.com/S0921452615301885/1-s2.0-S0921452615301885-main.pdf?_tid=a ...
added
14-Sep-16
6.  Title: Development of an all-SiC neuronal interface device
 Author(s): Bernardin, Evans; Frewin, Christopher L.; Dey, Abhishek; et al.
 Source: Mrs Advances Volume: 1 Issue: 55 Pages: 3679-3684 Published: 2016
 Times Cited: 1
 DOI: 10.1557/adv.2016.360
added
05-Apr-18
7.  Title: Donor and double-donor transitions of the carbon vacancy related EH6/7 deep level in 4H-SiC
 Author(s): Booker, I. D.; Janzen, E.; Son, N. T.; et al.
 Source: Journal of Applied Physics Volume: 119 Issue: 23 Published: JUN 21 2016
 Times Cited: 2
 DOI: 10.1063/1.4954006 /  Author-provided URL : http://scitation.aip.org/docserver/fulltext/aip/journal/jap/119/23/1.4954006.pdf ...
added
14-Sep-16
8.  Title: Oxidation-Induced Deep Levels in n- and p-Type 4H- and 6H-SiC and Their Influence on Carrier Lifetime
 Author(s): Booker, I. D.; Abdalla, H.; Hassan, J.; et al.
 Source: Physical Review Applied Volume: 6 Issue: 1 Published: JUL 19 2016
 Times Cited: 0
 DOI: 10.1103/PhysRevApplied.6.014010 /  Author-provided URL : http://journals.aps.org/prapplied/abstract/10.1103/PhysRevApplied.6.014010
added
14-Sep-16
9.  Title: Silicon Carbide As a Robust Neural Interface (Invited)
 Author(s): Frewin, Christopher L.; Bernardin, Evans; Deku, Felix; et al.
 Source: Gallium Nitride and Silicon Carbide Power Technologies 6 Volume: 75 Issue: 12 Pages: 39-45 Published: 2016
 Times Cited: 0
 DOI: 10.1149/07512.0039ecst
added
05-Apr-18
10.  Title: Assessment of H-intercalated graphene for microwave FETs through material characterization and electron transport studies
 Author(s): Winters, M.; Habibpour, O.; Ivanov, I. G.; et al.
 Source: Carbon Volume: 81 Pages: 96-104 Published: 2015
 Times Cited: 6
 DOI: 10.1016/j.carbon.2014.09.029 /  Author-provided URL : http://ac.els-cdn.com/S0008622314008811/1-s2.0-S0008622314008811-main.pdf?_tid=c ...
added
29-Mar-15
publication(s)  
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