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Mortet, Vincent
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ResearcherID: G-6180-2014
URL: http://www.researcherid.com/rid/G-6180-2014
Subject: Physics
Keywords: diamond , diamond-like carbon , diamond synthesis , diamond films , diamonds , electronic materials , electronic devices , carrier lifetime , carrier
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This list contains papers that I have authored.

publication(s)  
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1.  Title: Dispersion properties and low infrared optical losses in epitaxial AlN on sapphire substrate in the visible and infrared range
 Author(s): Soltani, A.; Stolz, A.; Charrier, J.; et al.
 Source: Journal of Applied Physics Volume: 115 Issue: 16 Published: APR 28 2014
 Times Cited: 3
 DOI: 10.1063/1.4873236
added
04-Jun-14
2.  Title: Hypersonic band gap in an AlN-TiN bilayer phononic crystal slab
 Author(s): Hemon, S.; Akjouj, A.; Soltani, A.; et al.
 Source: Applied Physics Letters Volume: 104 Issue: 6 Published: FEB 10 2014
 Times Cited: 4
 DOI: 10.1063/1.4864310
added
04-Jun-14
3.  Title: Large boron-interstitial cluster modelling in BF3 plasma implanted silicon
 Author(s): Essa, Z.; Cristiano, F.; Spiegel, Y.; et al.
 Source: Physica Status Solidi C: Current Topics in Solid State Physics, Vol 11, No 1 Volume: 11 Issue: 1 Pages: 117-120 Published: 2014
 Times Cited: 2
 DOI: 10.1002/pssc.201300165
added
04-Jun-14
4.  Title: Hall effect characterization of 4H-SiC MOSFETs: Influence of nitrogen channel implantation
 Author(s): Mortet, V.; Bedel-Pereira, E.; Bobo, J. F.; et al.
 Source: Silicon Carbide and Related Materials 2012 Volume: 740-742 Pages: 525-528 Published: 2013
 Times Cited: 2
 DOI: 10.4028/www.scientific.net/MSF.740-742.525
added
04-Jun-14
5.  Title: Verification of Near-Interface Traps Models by Electrical Measurements on 4H-SiC n-channel MOSFETs
 Author(s): Uhnevionak, V.; Strenger, C.; Burenkov, A.; et al.
 Source: Silicon Carbide and Related Materials 2012 Volume: 740-742 Pages: 533-536 Published: 2013
 Times Cited: 1
 DOI: 10.4028/www.scientific.net/MSF.740-742.533
added
04-Jun-14
6.  Title: BF3 PIII modeling: implantation, amorphisation and diffusion
 Author(s): Essa, Z.; Cristiano, F.; Spiegel, Y.; et al.
 Source: Ion Implantation Technology 2012 Volume: 1496 Pages: 237-240 Published: 2012
 Times Cited: 3
 DOI: 10.1063/1.4766532
added
04-Jun-14
7.  Title: Comparative Study of Electrical and Microstructural Properties of 4H-SiC MOSFETs
 Author(s): Strenger, C.; Haeublein, V.; Enbacher, T.; et al.
 Source: Silicon Carbide and Related Materials 2011, Pts 1 and 2 Volume: 717-720 Pages: 437-440 Published: 2012
 Times Cited: 6
 DOI: 10.4028/www.scientific.net/MSF.717-720.437
added
04-Jun-14
8.  Title: Hexagonal boron nitride nanowalls: physical vapour deposition, 2D/3D morphology and spectroscopic analysis
 Author(s): BenMoussa, B.; D'Haen, J.; Borschel, C.; et al.
 Source: Journal of Physics D-Applied Physics Volume: 45 Issue: 13 Published: APR 4 2012
 Times Cited: 12
 DOI: 10.1088/0022-3727/45/13/135302
added
04-Jun-14
9.  Title: Nano-Analytical and Electrical Characterization of 4H-SiC MOSFETs
 Author(s): Beltran, Ana M.; Schamm-Chardon, Sylvie; Mortet, Vincent; et al.
 Source: Heterosic & Wasmpe 2011 Volume: 711 Pages: 134-138 Published: 2012
 Times Cited: 2
 DOI: 10.4028/www.scientific.net/MSF.711.134
added
04-Jun-14
10.  Title: Theoretical study of Lamb acoustic waves characteristics in a AlN/diamond composite membranes for Super High Frequency range operating devices
 Author(s): Talbi, A.; Soltani, A.; Mortet, V.; et al.
 Source: Diamond and Related Materials Volume: 22 Pages: 66-69 Published: FEB 2012
 Times Cited: 6
 DOI: 10.1016/j.diamond.2011.10.027
added
04-Jun-14
publication(s)  
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