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Kakanakova-Georgieva, Anelia
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ResearcherID: L-1142-2014
URL: http://www.researcherid.com/rid/L-1142-2014
Subject: Materials Science
ORCID: http://orcid.org/0000-0002-7042-2351
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Department of Physics, Chemistry and Biology (IFM)
Role:
My URLs: http://www.ifm.liu.se/materialphysics/semicond/staff/anelia-kakanakova/
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material
 Author(s): Nilsson, D.; Janzen, E.; Kakanakova-Georgieva, A.
 Source: Journal of Physics D-Applied Physics Volume: 49 Issue: 17 Published: MAY 5 2016
 Times Cited: 2
 DOI: 10.1088/0022-3727/49/17/175108
added
30-May-17
2.  Title: n-Type conductivity bound by the growth temperature: the case of Al0.72Ga0.28N highly doped by silicon
 Author(s): Kakanakova-Georgieva, A.; Sahonta, S. -L.; Nilsson, D.; et al.
 Source: Journal of Materials Chemistry C Volume: 4 Issue: 35 Pages: 8291-8296 Published: 2016
 Times Cited: 2
 DOI: 10.1039/c6tc02825j
added
30-May-17
3.  Title: Tuning band inversion symmetry of buckled III-Bi sheets by halogenation
 Author(s): Freitas, R. R. Q.; de Brito Mota, F.; Rivelino, R.; et al.
 Source: Nanotechnology Volume: 27 Issue: 5 Published: FEB 5 2016
 Times Cited: 3
 DOI: 10.1088/0957-4484/27/5/055704
added
30-May-17
4.  Title: Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties
 Author(s): dos Santos, Renato B.; de Brito Mota, F.; Rivelino, R.; et al.
 Source: Nanotechnology Volume: 27 Issue: 14 Published: APR 8 2016
 Times Cited: 16
 DOI: 10.1088/0957-4484/27/14/145601
added
30-May-17
5.  Title: Dopant species with Al-Si and N-Si bonding in the MOCVD of AlN implementing trimethylaluminum, ammonia and silane
 Author(s): dos Santos, R. B.; Rivelino, R.; de Brito Mota, F.; et al.
 Source: Journal of Physics D-Applied Physics Volume: 48 Issue: 29 Published: JUL 29 2015
 Times Cited: 0
 DOI: 10.1088/0022-3727/48/29/295104
added
10-Aug-15
6.  Title: Exciton luminescence in AIN triggered by hydrogen and thermal annealing
 Author(s): Feneberg, Martin; Nguyen Tien Son; Kakanakova-Georgieva, Anelia
 Source: Applied Physics Letters Volume: 106 Issue: 24 Published: JUN 15 2015
 Times Cited: 2
 DOI: 10.1063/1.4922723
added
10-Aug-15
7.  Title: Feasibility of novel (H3C)(n)X(SiH3)(3-n) compounds (X = B, Al, Ga, In): structure, stability, reactivity, and Raman characterization from ab initio calculations
 Author(s): dos Santos, Renato B.; Rivelino, R.; de Brito Mota, F.; et al.
 Source: Dalton Transactions Volume: 44 Issue: 7 Pages: 3356-3366 Published: 2015
 Times Cited: 5
 DOI: 10.1039/c4dt03406f
added
10-Aug-15
8.  Title: On the behavior of silicon donor in conductive AlxGa1-xN (0.63 <= x <= 1)
 Author(s): Nilsson, D.; Trinh, X. T.; Janzen, E.; et al.
 Source: Physica Status Solidi B-Basic Solid State Physics Volume: 252 Issue: 6 Pages: 1306-1310 Published: JUN 2015
 Times Cited: 4
 DOI: 10.1002/pssb.201451559
added
10-Aug-15
9.  Title: Spin-orbit-induced gap modification in buckled honeycomb XBi and XBi3 (X = B, Al, Ga, and In) sheets
 Author(s): Freitas, R. R. Q.; de Brito Mota, F.; Rivelino, R.; et al.
 Source: Journal of Physics-Condensed Matter Volume: 27 Issue: 48 Published: DEC 9 2015
 Times Cited: 1
 DOI: 10.1088/0953-8984/27/48/485306
added
30-May-17
10.  Title: Topological Insulating Phases in Two-Dimensional Bismuth-Containing Single Layers Preserved by Hydrogenation
 Author(s): Freitas, R. R. Q.; Rivelino, R.; Mota, F. de Brito; et al.
 Source: Journal of Physical Chemistry C Volume: 119 Issue: 41 Pages: 23599-23606 Published: OCT 15 2015
 Times Cited: 16
 DOI: 10.1021/acs.jpcc.5b07961
added
18-Dec-15
publication(s)  
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