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Weber, Heiko B
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ResearcherID: D-2654-2012
URL: http://www.researcherid.com/rid/D-2654-2012
Subject: Physics
Keywords: molecular electronics; epitaxial graphene; solid state electronics
ORCID: http://orcid.org/0000-0002-6403-9022
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Chair for Applied Physics; Physics Department
Role:
My URLs: http://www.lap.physik.uni-erlangen.de/
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Anomalous Dirac point transport due to extended defects in bilayer graphene
 Author(s): Shallcross, Sam; Sharma, Sangeeta; Weber, Heiko B.
 Source: Nature Communications Volume: 8 Issue: 1 Pages: 342 Published: 2017/08/24
 Times Cited: 0
 DOI: 10.1038/s41467-017-00397-8 /  Author-provided URL : https://doi.org/10.1038/s41467-017-00397-8
added
24-Aug-17
2.  Title: Charge transport in C-60-based single-molecule junctions with graphene electrodes
 Author(s): Leitherer, Susanne; Coto, Pedro B.; Ullmann, Konrad; et al.
 Source: Nanoscale Volume: 9 Issue: 21 Pages: 7217-7226 Published: JUN 7 2017
 Times Cited: 1
 DOI: 10.1039/c7nr00170c /  Author-provided URL : http://pubs.rsc.org/en/content/articlepdf/2017/nr/c7nr00170c
added
21-Jun-17
3.  Title: Charge-Carrier Transport in Large-Area Epitaxial Graphene
 Author(s): Kisslinger, Ferdinand; Popp, Matthias; Jobst, Johannes; et al.
 Source: Annalen der Physik Pages: 1700048 Published: 2017
 DOI: 10.1002/andp.201700048 /  Author-provided URL : http://dx.doi.org/10.1002/andp.201700048 http://onlinelibrary.wiley.com/store/10.1002/andp.201700048/asset/andp201700048. ...
added
14-Jul-17
4.  Title: Origin of nonsaturating linear magnetoresistivity
 Author(s): Kisslinger, Ferdinand; Ott, Christian; Weber, Heiko B.
 Source: Physical Review B Volume: 95 Issue: 2 Published: JAN 18 2017
 Times Cited: 4
 DOI: 10.1103/PhysRevB.95.024204
added
06-Mar-17
5.  Title: An electrical analogy to Mie scattering
 Author(s): Caridad, Jose M.; Connaughton, Stephen; Ott, Christian; et al.
 Source: Nat Commun Volume: 7 Published: 2016
 Times Cited: 1
 DOI: 10.1038/ncomms12894 /  Author-provided URL : http://dx.doi.org/10.1038/ncomms12894
added
29-Sep-16
6.  Title: Doping of 4H-SiC with Group IV Elements
 Author(s): Krieger, Michael; Rühl, Maximilian; Sledziewski, Tomasz; et al.
 Conference: Materials Science Forum Volume: 858 Pages: 301-307 Year: 2016
 DOI: 10.4028/www.scientific.net/MSF.858.301 /  Author-provided URL : http://www.scientific.net/MSF.858.301.pdf
added
08-Apr-16
7.  Title: Effect of germanium doping on electrical properties of n-type 4H-SiC homoepitaxial layers grown by chemical vapor deposition
 Author(s): Sledziewski, T.; Vivona, M.; Alassaad, K.; et al.
 Source: Journal of Applied Physics Volume: 120 Issue: 20 Published: NOV 28 2016
 Times Cited: 0
 DOI: 10.1063/1.4967301
added
13-Jan-17
8.  Title: Maximization of the optical intra-cavity power of whispering-gallery mode resonators via coupling prism
 Author(s): Santamaria-Botello, G. A.; Munoz, L. E. G.; Sedlmeir, F.; et al.
 Source: Optics Express Volume: 24 Issue: 23 Pages: 26503-26514 Published: 2016
 Times Cited: 0
 DOI: 10.1364/oe.24.026503
added
29-Dec-16
9.  Title: On the Origin of Threshold Voltage Instability under Operating Conditions of 4H-SiC n-Channel MOSFETs
 Author(s): Pobegen, Gregor; Weisse, Julietta; Hauck, Martin; et al.
 Conference: Materials Science Forum Volume: 858 Pages: 473-476 Year: 2016
 DOI: 10.4028/www.scientific.net/MSF.858.473 /  Author-provided URL : http://www.scientific.net/MSF.858.473.pdf
added
08-Apr-16
10.  Title: Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO2 Interfaces
 Author(s): Sledziewski, Tomasz; Weber, Heiko B.; Krieger, Michael
 Conference: Materials Science Forum Volume: 858 Pages: 697-700 Year: 2016
 DOI: 10.4028/www.scientific.net/MSF.858.697 /  Author-provided URL : http://www.scientific.net/MSF.858.697.pdf
added
08-Apr-16
publication(s)  
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