ResearcherID Thomson Reuters  

Pikhtin, Nikita A.
Create a ResearcherID badge for this researcher View publications analytics for this researcher
Close
ResearcherID: F-9066-2014
Other Names: N.A.Pikhtin; Nikita Pikhtin; N.Pikhtin; Pikhtin N.A.; Nikita A.Pikhtin
URL: http://www.researcherid.com/rid/F-9066-2014
Subject: Physics
My Institutions (more details)
Primary Institution:
Sub-org/Dept:
Role:
 
 

This list contains papers that I have authored.

publication(s)  
First Page Previous Page Page   of  12  Go Next Page Last Page
  Sort by:    Results per page: 
1.  Title: Laser-diode bars based on AlGaAsP/GaAs heterostructures emitting at a wavelength of 850 nm
 Author(s): Shamakhov, V. V.; Nikolaev, D. N.; Lyutetskiy, A. V.; et al.
 Source: Semiconductors Volume: 48 Issue: 3 Pages: 373-376 Published: MAR 2014
 Times Cited: 0
 DOI: 10.1134/S1063782614030233
added
16-May-14
2.  Title: AlGaAs/GaAs diode lasers (1020-1100 nm) with an asymmetric broadened single transverse mode waveguide
 Author(s): Slipchenko, S. O.; Podoskin, A. A.; Vinokurov, D. A.; et al.
 Source: Semiconductors Volume: 47 Issue: 8 Pages: 1079-1083 Published: AUG 2013
 Times Cited: 8
 DOI: 10.1134/S1063782613080186
added
16-May-14
3.  Title: High-Power Pulse Semiconductor Laser-Thyristor Emitting at 900-nm Wavelength
 Author(s): Slipchenko, Sergey O.; Podoskin, Aleksandr A.; Rozhkov, Alexsander V.; et al.
 Source: Ieee Photonics Technology Letters Volume: 25 Issue: 17 Pages: 1664-1667 Published: SEP 1 2013
 Times Cited: 12
 DOI: 10.1109/LPT.2013.2272801
added
16-May-14
4.  Title: Semiconductor InGaAs/GaAs injection lasers with waveguides based on a single quantum well
 Author(s): Slipchenko, S. O.; Podoskin, A. A.; Pikhtin, N. A.; et al.
 Source: Technical Physics Letters Volume: 39 Issue: 4 Pages: 364-366 Published: APR 2013
 Times Cited: 2
 DOI: 10.1134/S1063785013040251
added
16-May-14
5.  Title: Semiconductor lasers with internal wavelength selection
 Author(s): Zolotarev, V. V.; Leshko, A. Yu.; Lyutetskii, A. V.; et al.
 Source: Semiconductors Volume: 47 Issue: 1 Pages: 122-126 Published: JAN 2013
 Times Cited: 4
 DOI: 10.1134/S1063782613010247
added
16-May-14
6.  Title: 850-nm diode lasers based on AlGaAsP/GaAs heterostructures
 Author(s): Vinokurov, D. A.; Kapitonov, V. A.; Lyutetskiy, A. V.; et al.
 Source: Semiconductors Volume: 46 Issue: 10 Pages: 1321-1325 Published: OCT 2012
 Times Cited: 4
 DOI: 10.1134/S106378261210020X
added
16-May-14
7.  Title: DIAGNOSTICS OF SEMICONDUCTOR STRUCTURES BY MEANS OF AN APERTURELESS NEAR-FIELD TERAHERTZ MICROSCOPE
 Author(s): Trukhin, V. N.; Golubok, A. O.; Lyutetsky, A. V.; et al.
 Source: Radiophysics and Quantum Electronics Volume: 54 Issue: 8-9 Pages: 577-584 Published: JAN 2012
 Times Cited: 0
added
16-May-14
8.  Title: High-Order Diffraction Gratings for High-Power Semiconductor Lasers
 Author(s): Vasil'eva, V. V.; Vinokurov, D. A.; Zolotarev, V. V.; et al.
 Source: Semiconductors Volume: 46 Issue: 2 Pages: 241-246 Published: FEB 2012
 Times Cited: 3
 DOI: 10.1134/S1063782612020236
added
16-May-14
9.  Title: Temperature dependence of the threshold current density in semiconductor lasers (lambda=1050-1070 nm)
 Author(s): Shashkin, I. S.; Vinokurov, D. A.; Lyutetskiy, A. V.; et al.
 Source: Semiconductors Volume: 46 Issue: 9 Pages: 1211-1215 Published: SEP 2012
 Times Cited: 3
 DOI: 10.1134/S1063782612090217
added
16-May-14
10.  Title: Thermal delocalization of carriers in semiconductor lasers (lambda=1010-1070 nm)
 Author(s): Shashkin, I. S.; Vinokurov, D. A.; Lyutetskiy, A. V.; et al.
 Source: Semiconductors Volume: 46 Issue: 9 Pages: 1207-1210 Published: SEP 2012
 Times Cited: 6
 DOI: 10.1134/S1063782612090205
added
16-May-14
publication(s)  
First Page Previous Page Page   of  12  Go Next Page Last Page
  Sort by:    Results per page: