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Lin, Shih-Yen
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ResearcherID: A-7198-2012
URL: http://www.researcherid.com/rid/A-7198-2012
Subject: Engineering
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Research Center for Applied Sciences (RCAS)
Role:
Joint Affiliation:
Sub-org/Dept: Graduate Institute of Electronics Engineering
Role:
Description:
My URLs: http://www.rcas.sinica.edu.tw/faculty/shihyen.html
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition
 Author(s): Su, Ching-Yuan; Lu, Ang-Yu; Wu, Chih-Yu; et al.
 Source: Nano Letters Volume: 11 Issue: 9 Pages: 3612-3616 Published: SEP 2011
 Times Cited: 152
 DOI: 10.1021/nl201362n
added
01-Feb-12
2.  Title: Near-room-temperature operation of an InAs/GaAs quantum-dot infrared photodetector
 Author(s): Tang, SF; Lin, SY; Lee, SC
 Source: Applied Physics Letters Volume: 78 Issue: 17 Pages: 2428-2430 Published: APR 23 2001
 Times Cited: 116
 DOI: 10.1063/1.1362201
added
01-Feb-12
3.  Title: High-temperature operation normal incident 256 x 256 InAs-GaAs quantum-dot infrared photodetector focal plane array
 Author(s): Tang, SF; Chiang, CD; Weng, PK; et al.
 Source: Ieee Photonics Technology Letters Volume: 18 Issue: 5-8 Pages: 986-988 Published: MAR-APR 2006
 Times Cited: 63
 DOI: 10.1109/LPT.2006.873458
added
01-Feb-12
4.  Title: High-performance InAs/GaAs quantum-dot infrared photodetectors with a single-sided Al0.3Ga0.7As blocking layer
 Author(s): Lin, SY; Tsai, YR; Lee, SC
 Source: Applied Physics Letters Volume: 78 Issue: 18 Pages: 2784-2786 Published: APR 30 2001
 Times Cited: 58
 DOI: 10.1063/1.1365950
added
01-Feb-12
5.  Title: Room-temperature operation type-II GaSb/GaAs quantum-dot infrared light-emitting diode
 Author(s): Lin, Shih-Yen; Tseng, Chi-Che; Lin, Wei-Hsun; et al.
 Source: Applied Physics Letters Volume: 96 Issue: 12 Published: MAR 22 2010
 Times Cited: 38
 DOI: 10.1063/1.3371803
added
01-Feb-12
6.  Title: InAs/GaAs quantum dot infrared photodetector (QDIP) with double Al0.3Ga0.7As blocking barriers
 Author(s): Tang, SF; Lin, SY; Lee, SC
 Source: Ieee Transactions on Electron Devices Volume: 49 Issue: 8 Pages: 1341-1347 Published: AUG 2002
 Times Cited: 28
 DOI: 10.1109/TED.2002.801441
added
01-Feb-12
7.  Title: Comparison of InAs/GaAs quantum dot infrared photodetector and GaAs/(AlGa)As superlattice infrared photodetector
 Author(s): Lin, SY; Tsai, YJ; Lee, SC
 Source: Japanese Journal of Applied Physics Part 2-Letters Volume: 40 Issue: 12A Pages: L1290-L1292 Published: DEC 1 2001
 Times Cited: 28
 DOI: 10.1143/JJAP.40.L1290
added
01-Feb-12
8.  Title: Singlemode (SMSR > 40 dB) proton-implanted photonic crystal vertical-cavity surface-emitting lasers
 Author(s): Yang, HPD; Lai, FI; Chang, YH; et al.
 Source: Electronics Letters Volume: 41 Issue: 6 Pages: 326-328 Published: MAR 17 2005
 Times Cited: 22
 DOI: 10.1049/el:20058344
added
01-Feb-12
9.  Title: Vertical organic triodes with a high current gain operated in saturation region
 Author(s): Yang, Chuan-Yi; Ou, Tzu-Min; Cheng, Shiau-Shin; et al.
 Source: Applied Physics Letters Volume: 89 Issue: 18 Published: OCT 30 2006
 Times Cited: 21
 DOI: 10.1063/1.2374875
added
01-Feb-12
10.  Title: MBE-grown high kappa gate dielectrics of HfO2 and (Hf-Al)O-2 for Si and III-V semiconductors nano-electronics
 Author(s): Lee, WC; Lee, YJ; Wu, YD; et al.
 Source: Journal of Crystal Growth Volume: 278 Issue: 1-4 Pages: 619-623 Published: MAY 1 2005
 Times Cited: 21
 DOI: 10.1016/j.jcrysgro.2004.12.127
added
01-Feb-12
publication(s)  
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