ResearcherID Thomson Reuters  

Wallace, Robert M
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ResearcherID: A-5283-2008
URL: http://www.researcherid.com/rid/A-5283-2008
Subject: Engineering; Materials Science; Physics
ORCID: http://orcid.org/0000-0001-5566-4806
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This list contains papers that I have authored.

publication(s)  
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1.  Title: Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric
 Author(s): Zhao, Peng; Azcatl, Angelica; Bolshakov, Pavel; et al.
 Source: Journal of Vacuum Science & Technology B Volume: 35 Issue: 1 Published: JAN-FEB 2017
 Times Cited: 0
 DOI: 10.1116/1.4974220
added
11-Apr-17
2.  Title: Electronic transport across metal-graphene edge contact
 Author(s): Gong, Cheng; Zhang, Chenxi; Oh, Young Jun; et al.
 Source: 2d Materials Volume: 4 Issue: 2 Published: JUN 2017
 Times Cited: 0
 DOI: 10.1088/2053-1583/aa5c9d
added
11-Apr-17
3.  Title: Impurity and silicate formation dependence on O-3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films
 Author(s): Park, Tae Joo; Byun, Young-Chul; Wallace, Robert M.; et al.
 Source: Journal of Chemical Physics Volume: 146 Issue: 5 Published: FEB 7 2017
 Times Cited: 0
 DOI: 10.1063/1.4975083
added
11-Apr-17
4.  Title: Reduction of Fermi level pinning at Au-MoS2 interfaces by atomic passivation on Au surface
 Author(s): Min, Kyung-Ah; Park, Jinwoo; Wallace, Robert M.; et al.
 Source: 2d Materials Volume: 4 Issue: 1 Published: MAR 2017
 Times Cited: 1
 DOI: 10.1088/2053-1583/4/1/015019
added
21-Feb-17
5.  Title: Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures
 Author(s): Zhang, Chenxi; Gong, Cheng; Nie, Yifan; et al.
 Source: 2d Materials Volume: 4 Issue: 1 Published: MAR 2017
 Times Cited: 0
 DOI: 10.1088/2053-1583/4/1/015026
added
21-Feb-17
6.  Title: Atomic and Electronic Structures of WTe2 Probed by High Resolution Electron Microscopy and ab Initio Calculations
 Author(s): Lu, Ning; Zhang, Chenxi; Lee, Chia-Hui; et al.
 Source: Journal of Physical Chemistry C Volume: 120 Issue: 15 Pages: 8364-8369 Published: APR 21 2016
 Times Cited: 2
 DOI: 10.1021/acs.jpcc.6b01044
added
26-Sep-16
7.  Title: Atomically-thin layered films for device applications based upon 2D TMDC materials
 Author(s): McDonnell, Stephen J.; Wallace, Robert M.
 Source: Thin Solid Films Volume: 616 Pages: 482-501 Published: OCT 1 2016
 Times Cited: 0
 DOI: 10.1016/j.tsf.2016.08.068
added
21-Feb-17
8.  Title: Band alignments between SmTiO3, GdTiO3, and SrTiO3
 Author(s): Bjaalie, Lars; Azcatl, Angelica; McDonnell, Stephen; et al.
 Source: Journal of Vacuum Science & Technology a Volume: 34 Issue: 6 Published: NOV 2016
 Times Cited: 0
 DOI: 10.1116/1.4963833
added
21-Feb-17
9.  Title: Charge Mediated Reversible Metal-Insulator Transition in Monolayer MoTe2 and WxMo1-xTe2 Alloy
 Author(s): Zhang, Chenxi; Santosh, K. C.; Nie, Yifan; et al.
 Source: Acs Nano Volume: 10 Issue: 8 Pages: 7370-7375 Published: AUG 2016
 Times Cited: 6
 DOI: 10.1021/acsnano.6b00148
added
26-Sep-16
10.  Title: Contact Metal-MoS2 Interfacial Reactions and Potential Implications on MoS2-Based Device Performance
 Author(s): Smyth, Christopher M.; Addou, Rafik; McDonnell, Stephen; et al.
 Source: Journal of Physical Chemistry C Volume: 120 Issue: 27 Pages: 14719-14729 Published: JUL 14 2016
 Times Cited: 7
 DOI: 10.1021/acs.jpcc.6b04473
added
26-Sep-16
publication(s)  
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