ResearcherID Thomson Reuters  

Wallace, Robert M
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ResearcherID: A-5283-2008
URL: http://www.researcherid.com/rid/A-5283-2008
Subject: Engineering; Materials Science; Physics
ORCID: http://orcid.org/0000-0001-5566-4806
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This list contains papers that I have authored.

publication(s)  
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1.  Title: A crystalline oxide passivation on In0.53Ga0.47As (100)
 Author(s): Qin, Xiaoye; Wang, Wei-E; Droopad, Ravi; et al.
 Source: Journal of Applied Physics Volume: 121 Issue: 12 Published: MAR 28 2017
 Times Cited: 0
 DOI: 10.1063/1.4979202
added
05-Jul-17
2.  Title: A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides
 Author(s): Nie, Yifan; Liang, Chaoping; Cha, Pil-Ryung; et al.
 Source: Scientific Reports Volume: 7 Published: JUN 7 2017
 Times Cited: 0
 DOI: 10.1038/s41598-017-02919-2
added
05-Jul-17
3.  Title: Carbon-assisted chemical vapor deposition of hexagonal boron nitride
 Author(s): Ismach, Ariel; Chou, Harry; Mende, Patrick; et al.
 Source: 2d Materials Volume: 4 Issue: 2 Published: JUN 2017
 Times Cited: 0
 DOI: 10.1088/2053-1583/aa74a5
added
05-Jul-17
4.  Title: Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric
 Author(s): Zhao, Peng; Azcatl, Angelica; Bolshakov, Pavel; et al.
 Source: Journal of Vacuum Science & Technology B Volume: 35 Issue: 1 Published: JAN-FEB 2017
 Times Cited: 1
 DOI: 10.1116/1.4974220
added
11-Apr-17
5.  Title: Electronic transport across metal-graphene edge contact
 Author(s): Gong, Cheng; Zhang, Chenxi; Oh, Young Jun; et al.
 Source: 2d Materials Volume: 4 Issue: 2 Published: JUN 2017
 Times Cited: 0
 DOI: 10.1088/2053-1583/aa5c9d
added
11-Apr-17
6.  Title: Impurity and silicate formation dependence on O3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films.
 Author(s): Park, Tae Joo; Byun, Young-Chul; Wallace, Robert M; et al.
 Source: The Journal of chemical physics Volume: 146 Issue: 5 Pages: 052821 Published: 2017-Feb-07
 DOI: 10.1063/1.4975083
added
11-Jul-17
7.  Title: New Mo6 Te6 Sub-Nanometer-Diameter Nanowire Phase from 2H-MoTe2.
 Author(s): Zhu, Hui; Wang, Qingxiao; Zhang, Chenxi; et al.
 Source: Advanced materials (Deerfield Beach, Fla.) Volume: 29 Issue: 18 Published: 2017-May
 DOI: 10.1002/adma.201606264
added
11-Jul-17
8.  Title: Reduction of Fermi level pinning at Au-MoS2 interfaces by atomic passivation on Au surface
 Author(s): Min, Kyung-Ah; Park, Jinwoo; Wallace, Robert M.; et al.
 Source: 2d Materials Volume: 4 Issue: 1 Published: MAR 2017
 Times Cited: 2
 DOI: 10.1088/2053-1583/4/1/015019
added
21-Feb-17
9.  Title: Systematic study of electronic structure and band alignment of monolayer transition metal dichalcogenides in Van der Waals heterostructures
 Author(s): Zhang, Chenxi; Gong, Cheng; Nie, Yifan; et al.
 Source: 2d Materials Volume: 4 Issue: 1 Published: MAR 2017
 Times Cited: 0
 DOI: 10.1088/2053-1583/4/1/015026
added
21-Feb-17
10.  Title: WSe2-contact metal interface chemistry and band alignment under high vacuum and ultra high vacuum deposition conditions
 Author(s): Smyth, Christopher M.; Addou, Rafik; McDonnell, Stephen; et al.
 Source: 2d Materials Volume: 4 Issue: 2 Published: JUN 2017
 Times Cited: 0
 DOI: 10.1088/2053-1583/aa6bea
added
05-Jul-17
publication(s)  
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