ResearcherID Thomson Reuters  

Wallace, Robert M
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ResearcherID: A-5283-2008
URL: http://www.researcherid.com/rid/A-5283-2008
Subject: Engineering; Materials Science; Physics
ORCID: http://orcid.org/0000-0001-5566-4806
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This list contains papers that I have authored.

publication(s)  
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1.  Title: A crystalline oxide passivation on In0.53Ga0.47As (100)
 Author(s): Qin, Xiaoye; Wang, Wei-E; Droopad, Ravi; et al.
 Source: Journal of Applied Physics Volume: 121 Issue: 12 Published: MAR 28 2017
 Times Cited: 1
 DOI: 10.1063/1.4979202
added
05-Jul-17
2.  Title: A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides
 Author(s): Nie, Yifan; Liang, Chaoping; Cha, Pil-Ryung; et al.
 Source: Scientific Reports Volume: 7 Published: JUN 7 2017
 Times Cited: 1
 DOI: 10.1038/s41598-017-02919-2
added
05-Jul-17
3.  Title: Al2O3 on WSe2 by ozone based atomic layer deposition: Nucleation and interface study
 Author(s): Azcatl, Angelica; Wang, Qingxiao; Kim, Moon J.; et al.
 Source: Apl Materials Volume: 5 Issue: 8 Published: AUG 2017
 Times Cited: 0
 DOI: 10.1063/1.4992120
added
14-Sep-17
4.  Title: Carbon-assisted chemical vapor deposition of hexagonal boron nitride
 Author(s): Ismach, Ariel; Chou, Harry; Mende, Patrick; et al.
 Source: 2d Materials Volume: 4 Issue: 2 Published: JUN 2017
 Times Cited: 1
 DOI: 10.1088/2053-1583/aa74a5
added
05-Jul-17
5.  Title: Computational Study of MoS2/HfO2 Defective Interfaces for Nanometer-Scale Electronics
 Author(s): Santosh, K. C.; Longo, Roberto C.; Wallace, Robert M.; et al.
 Source: Acs Omega Volume: 2 Issue: 6 Pages: 2827-2834 Published: JUN 2017
 Times Cited: 0
 DOI: 10.1021/acsomega.7b00636
added
14-Sep-17
6.  Title: Effects of annealing on top-gated MoS2 transistors with HfO2 dielectric
 Author(s): Zhao, Peng; Azcatl, Angelica; Bolshakov, Pavel; et al.
 Source: Journal of Vacuum Science & Technology B Volume: 35 Issue: 1 Published: JAN-FEB 2017
 Times Cited: 3
 DOI: 10.1116/1.4974220
added
11-Apr-17
7.  Title: Electrical characterization of top-gated molybdenum disulfide field-effect-transistors with high-k dielectrics
 Author(s): Bolshakov, Pavel; Zhao, Peng; Azcatl, Angelica; et al.
 Source: Microelectronic Engineering Volume: 178 Pages: 190-193 Published: JUN 25 2017
 Times Cited: 0
 DOI: 10.1016/j.mee.2017.04.045
added
14-Sep-17
8.  Title: Electronic transport across metal-graphene edge contact
 Author(s): Gong, Cheng; Zhang, Chenxi; Oh, Young Jun; et al.
 Source: 2d Materials Volume: 4 Issue: 2 Published: JUN 2017
 Times Cited: 0
 DOI: 10.1088/2053-1583/aa5c9d
added
11-Apr-17
9.  Title: Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer
 Author(s): Bolshakov, Pavel; Zhao, Peng; Azcatl, Angelica; et al.
 Source: Applied Physics Letters Volume: 111 Issue: 3 Published: JUL 17 2017
 Times Cited: 0
 DOI: 10.1063/1.4995242
added
14-Sep-17
10.  Title: Impurity and silicate formation dependence on O-3 pulse time and the growth temperature in atomic-layer-deposited La2O3 thin films
 Author(s): Park, Tae Joo; Byun, Young-Chul; Wallace, Robert M.; et al.
 Source: Journal of Chemical Physics Volume: 146 Issue: 5 Published: FEB 7 2017
 Times Cited: 0
 DOI: 10.1063/1.4975083
added
14-Sep-17
publication(s)  
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