ResearcherID Clarivate Analytics  

Fan, Bingfeng
Create a ResearcherID badge for this researcher View publications analytics for this researcher
Close
ResearcherID: Y-2867-2018
URL: http://www.researcherid.com/rid/Y-2867-2018
Subject: Materials Science; Optics; Physics
My Institutions (more details)
Primary Institution:
Sub-org/Dept:
Role:
 
 

This list contains papers that I have authored.

publication(s)  
First Page Previous Page Page   of  4  Go Next Page Last Page
  Sort by:    Results per page: 
1.  Title: Chip-scale white flip-chip light-emitting diode containing indium phosphide/zinc selenide quantum dots
 Author(s): Fan, B. F.; Yan, L. C.; Lao, Y. Q.; et al.
 Source: Applied Physics Letters Volume: 111 Issue: 7 Published: 2017
 Times Cited: 1
 DOI: 10.1063/1.4999094
added
12-Dec-18
2.  Title: Control of morphology and orientation for textured nanocrystalline indium oxide thin film: A growth zone diagram
 Author(s): Chen, Z. M.; Zhuo, Y.; Hu, R. Q.; et al.
 Source: Materials & Design Volume: 131 Pages: 410-418 Published: 2017
 Times Cited: 4
 DOI: 10.1016/j.matdes.2017.06.043
added
12-Dec-18
3.  Title: Enhanced Light Output of Near-Ultraviolet LEDs With Ta2O5/SiO2 Hybrid DBR Reflector
 Author(s): Ma, Y. F.; Fan, B. F.; Chen, Z. M.; et al.
 Source: Ieee Photonics Technology Letters Volume: 29 Issue: 18 Pages: 1564-1567 Published: 2017
 Times Cited: 4
 DOI: 10.1109/lpt.2017.2737029
added
12-Dec-18
4.  Title: Enhanced light extraction of GaN-based light-emitting diodes with periodic textured SiO2 on Al-doped ZnO transparent conductive layer
 Author(s): Zhao, Y.; Fan, B. F.; Chen, Y. T.; et al.
 Source: Chinese Physics B Volume: 25 Issue: 7 Published: 2016
 Times Cited: 1
 DOI: 10.1088/1674-1056/25/7/078502
added
12-Dec-18
5.  Title: Charge Trapping Memory Characteristics of Amorphous-Indium-Gallium-Zinc Oxide Thin-Film Transistors With Defect-Engineered Alumina Dielectric
 Author(s): Li, Y.; Pei, Y. L.; Hu, R. Q.; et al.
 Source: Ieee Transactions on Electron Devices Volume: 62 Issue: 4 Pages: 1184-1188 Published: 2015
 Times Cited: 6
 DOI: 10.1109/ted.2015.2402220
added
12-Dec-18
6.  Title: Correlation between grain orientation and carrier concentration of poly-crystalline In2O3 thin film grown by MOCVD
 Author(s): Hu, R. Q.; Pei, Y. L.; Chen, Z. M.; et al.
 Source: Journal of Materials Science Volume: 50 Issue: 3 Pages: 1058-1064 Published: 2015
 Times Cited: 3
 DOI: 10.1007/s10853-014-8662-9
added
12-Dec-18
7.  Title: Forming Free Bipolar ReRAM of Ag/a-IGZO/Pt with Improved Resistive Switching Uniformity Through Controlling Oxygen Partial Pressure
 Author(s): Pei, Y. L.; Mai, B. R.; Zhang, X. K.; et al.
 Source: Journal of Electronic Materials Volume: 44 Issue: 2 Pages: 645-650 Published: 2015
 Times Cited: 7
 DOI: 10.1007/s11664-014-3547-x
added
12-Dec-18
8.  Title: GaN-Based LEDs With Al-Doped ZnO Transparent Conductive Layer Grown by Metal Organic Chemical Vapor Deposition: Ultralow Forward Voltage and Highly Uniformity
 Author(s): Yang, J. C.; Pei, Y. L.; Fan, B. F.; et al.
 Source: Ieee Electron Device Letters Volume: 36 Issue: 4 Pages: 372-374 Published: 2015
 Times Cited: 10
 DOI: 10.1109/led.2015.2404137
added
12-Dec-18
9.  Title: Performance improvement of amorphous indium-gallium-zinc oxide ReRAM with SiO2 inserting layer
 Author(s): Pei, Y. L.; Mai, B. R.; Zhang, X. K.; et al.
 Source: Current Applied Physics Volume: 15 Issue: 4 Pages: 441-445 Published: 2015
 Times Cited: 8
 DOI: 10.1016/j.cap.2015.01.024
added
12-Dec-18
10.  Title: Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers
 Author(s): Zheng, Z. Y.; Chen, Z. M.; Wu, H. L.; et al.
 Source: Journal of Crystal Growth Volume: 387 Pages: 52-56 Published: 2014
 Times Cited: 5
 DOI: 10.1016/j.jcrysgro.2013.10.029
added
12-Dec-18
publication(s)  
First Page Previous Page Page   of  4  Go Next Page Last Page
  Sort by:    Results per page: