ResearcherID Thomson Reuters  

Bonanni, Alberta
Create a ResearcherID badge for this researcher View publications analytics for this researcher
Close
ResearcherID: C-1411-2008
URL: http://www.researcherid.com/rid/C-1411-2008
Subject: Materials Science; Physics
Keywords: semiconductor physics; spintronics; crystal growth
ORCID: http://orcid.org/0000-0003-4425-0346
My Institutions (more details)
Primary Institution:
Sub-org/Dept:
Role:
 
 

This list contains papers that I have authored.

publication(s)  
First Page Previous Page Page   of  15  Go Next Page Last Page
  Sort by:    Results per page: 
1.  Title: All-nitride AlxGa1-xN:Mn/GaN distributed Bragg reflectors for the near-infrared
 Author(s): Capuzzo, Giulia; Kysylychyn, Dmytro; Adhikari, Rajdeep; et al.
 Source: Scientific Reports Volume: 7 Published: FEB 15 2017
 Times Cited: 0
 DOI: 10.1038/srep42697
added
11-May-17
2.  Title: Industrial-scale sputter deposition of molybdenum oxide thin films: Microstructure evolution and properties
 Author(s): Pachlhofer, Julia M.; Martin-Luengo, Aitana Tarazaga; Franz, Robert; et al.
 Source: Journal of Vacuum Science & Technology a Volume: 35 Issue: 2 Published: MAR 2017
 Times Cited: 0
 DOI: 10.1116/1.4973214
added
11-May-17
3.  Title: Processing and charge state engineering of MoOx
 Author(s): Martin-Luengo, Aitana Tarazaga; Koestenbauer, Harald; Winkler, Joerg; et al.
 Source: Aip Advances Volume: 7 Issue: 1 Published: JAN 2017
 Times Cited: 0
 DOI: 10.1063/1.4974880
added
11-May-17
4.  Title: Characterization of AlN/AlGaN/GaN:C heterostructures grown on Si(111) using atom probe tomography, secondary ion mass spectrometry, and vertical current-voltage measurements
 Author(s): Huber, Martin; Daumiller, Ingo; Andreev, Andrei; et al.
 Source: Journal of Applied Physics Volume: 119 Issue: 12 Published: MAR 28 2016
 Times Cited: 3
 DOI: 10.1063/1.4944652
added
09-Nov-16
5.  Title: Controlling a three dimensional electron slab of graded AlxGa1-xN
 Author(s): Adhikari, R.; Li, Tian; Capuzzo, G.; et al.
 Source: Applied Physics Letters Volume: 108 Issue: 2 Published: JAN 11 2016
 Times Cited: 0
 DOI: 10.1063/1.4939788
added
05-Apr-16
6.  Title: Decoupling of epitaxy-related trapping effects in AlGaN/GaN metal-insulator semiconductor high-electron-mobility transistors
 Author(s): Huber, Martin; Curatola, Gilberto; Pozzovivo, Gianmauro; et al.
 Source: Physica Status Solidi a-Applications and Materials Science Volume: 213 Issue: 5 Pages: 1222-1228 Published: MAY 2016
 Times Cited: 0
 DOI: 10.1002/pssa.201532752
added
09-Nov-16
7.  Title: Probe Measurements of Electron Transport in GaN:Si/(Ga,Mn)N/GaN:Si Spin Filter Structures
 Author(s): Kalbarczyk, K.; Foltyn, M.; Grzybowski, M.; et al.
 Source: Acta Physica Polonica a Volume: 130 Issue: 5 Pages: 1196-1198 Published: NOV 2016
 Times Cited: 0
 DOI: 10.12693/APhysPolA.130.1196
added
11-May-17
8.  Title: Rashba semiconductor as spin Hall material: Experimental demonstration of spin pumping in wurtzite n-GaN:Si
 Author(s): Adhikari, R.; Matzer, M.; Martin-Luengo, A. Tarazaga; et al.
 Source: Physical Review B Volume: 94 Issue: 8 Published: AUG 31 2016
 Times Cited: 0
 DOI: 10.1103/PhysRevB.94.085205
added
09-Nov-16
9.  Title: Stretching magnetism with an electric field in a nitride semiconductor
 Author(s): Sztenkiel, D.; Foltyn, M.; Mazur, G. P.; et al.
 Source: Nature Communications Volume: 7 Published: OCT 26 2016
 Times Cited: 4
 DOI: 10.1038/ncomms13232
added
11-May-17
10.  Title: Analytical electron microscopy study on gallium nitride systems doped with manganese and iron
 Author(s): Meingast, A.; Quezada, A.N.; Devillers, T.; et al.
 Source: Semiconductor Science and Technology Volume: 30 Issue: 3 Pages: 035002 (9 pp.) Published: March 2015
 DOI: 10.1088/0268-1242/30/3/035002
added
11-Feb-15
publication(s)  
First Page Previous Page Page   of  15  Go Next Page Last Page
  Sort by:    Results per page: