ResearcherID Thomson Reuters  

Beschoten, Bernd
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ResearcherID: K-5470-2013
URL: http://www.researcherid.com/rid/K-5470-2013
ORCID: http://orcid.org/0000-0003-2359-2718
My Institutions (more details)
Primary Institution:
Sub-org/Dept: 2nd Institute of Physics
Role:
My URLs: http://institut2a.physik.rwth-aachen.de/de/start/start_news.php
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Electrical spin injection in a ferromagnetic semiconductor heterostructure
 Author(s): Ohno, Y; Young, DK; Beschoten, B; et al.
 Source: Nature Volume: 402 Issue: 6763 Pages: 790-792 Published: DEC 16 1999
 Times Cited: 1997
added
07-Oct-13
2.  Title: Domain state model for exchange bias. I. Theory
 Author(s): Nowak, U; Usadel, KD; Keller, J; et al.
 Source: Physical Review B Volume: 66 Issue: 1 Published: JUL 1 2002
 Times Cited: 309
 DOI: 10.1103/PhysRevB.66.014430
added
07-Oct-13
3.  Title: Diluted antiferromagnets in exchange bias: Proof of the domain state model
 Author(s): Miltenyi, P; Gierlings, M; Keller, J; et al.
 Source: Physical Review Letters Volume: 84 Issue: 18 Pages: 4224-4227 Published: MAY 1 2000
 Times Cited: 309
 DOI: 10.1103/PhysRevLett.84.4224
added
07-Oct-13
4.  Title: Magnetic circular dichroism studies of carrier-induced ferromagnetism in (Ga1-xMnx)As
 Author(s): Beschoten, B; Crowell, PA; Malajovich, I; et al.
 Source: Physical Review Letters Volume: 83 Issue: 15 Pages: 3073-3076 Published: OCT 11 1999
 Times Cited: 227
 DOI: 10.1103/PhysRevLett.83.3073
added
07-Oct-13
5.  Title: Origin of high-temperature ferromagnetism in (Ga,Mn)N layers grown on 4H-SiC(0001) by reactive molecular-beam epitaxy
 Author(s): Dhar, S; Brandt, O; Trampert, A; et al.
 Source: Applied Physics Letters Volume: 82 Issue: 13 Pages: 2077-2079 Published: MAR 31 2003
 Times Cited: 180
 DOI: 10.1063/1.1564292
added
07-Oct-13
6.  Title: Domain state model for exchange bias. II. Experiments
 Author(s): Keller, J; Miltenyi, P; Beschoten, B; et al.
 Source: Physical Review B Volume: 66 Issue: 1 Published: JUL 1 2002
 Times Cited: 161
 DOI: 10.1103/PhysRevB.66.014431
added
07-Oct-13
7.  Title: Spin coherence and dephasing in GaN
 Author(s): Beschoten, B; Johnston-Halperin, E; Young, DK; et al.
 Source: Physical Review B Volume: 63 Issue: 12 Pages: art. no.-121202 Published: MAR 15 2001
 Times Cited: 146
 DOI: 10.1103/PhysRevB.63.121202
added
07-Oct-13
8.  Title: SCALING BEHAVIOR AT THE INSULATOR-METAL TRANSITION IN BI2SR2(CAZR1-Z)CU2O8+Y WHERE R IS A RARE-EARTH ELEMENT
 Author(s): QUITMANN, C; ANDRICH, D; JARCHOW, C; et al.
 Source: Physical Review B Volume: 46 Issue: 18 Pages: 11813-11825 Published: NOV 1 1992
 Times Cited: 113
 DOI: 10.1103/PhysRevB.46.11813
added
07-Oct-13
9.  Title: Observation of Long Spin-Relaxation Times in Bilayer Graphene at Room Temperature
 Author(s): Yang, T. -Y.; Balakrishnan, J.; Volmer, F.; et al.
 Source: Physical Review Letters Volume: 107 Issue: 4 Published: JUL 21 2011
 Times Cited: 110
 DOI: 10.1103/PhysRevLett.107.047206
added
07-Oct-13
10.  Title: Toward Wafer Scale Fabrication of Graphene Based Spin Valve Devices
 Author(s): Avsar, Ahmet; Yang, Tsung-Yeh; Bae, Sukang; et al.
 Source: Nano Letters Volume: 11 Issue: 6 Pages: 2363-2368 Published: JUN 2011
 Times Cited: 108
 DOI: 10.1021/nl200714q
added
07-Oct-13
publication(s)  
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