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Lähnemann, Jonas
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ResearcherID: L-3589-2013
Other Names: Lahnemann, Jonas; Laehnemann, Jonas; Lahnemann, J.; Laehnemann, J.; Lähnemann, J.
URL: http://www.researcherid.com/rid/L-3589-2013
Subject: Materials Science; Physics
Keywords: gan; algan; ingan; gaas; semiconductor nanowires; cathodoluminescence spectroscopy; photoluminescence spectroscopy; cigs thin-film solar cells; photocurrent spectroscopy; e-beam lithography; spontaneous polarization
ORCID: http://orcid.org/0000-0003-4072-2369
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Semiconductor Spectroscopy
Role:
Past Institutions: Institut Nanosciences et Cryogenie (INAC); Paul-Drude-Institut für Festkörperelektronik; Paul-Drude-Institut für Festkörperelektronik
My URLs: http://www.laehnemann.de/jonas
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Luminescent N-polar (In,Ga)N/GaN quantum wells achieved by plasma-assisted molecular beam epitaxy at temperatures exceeding 700 degrees C
 Author(s): Cheze, C.; Feix, F.; Lahnemann, J.; et al.
 Source: Applied Physics Letters Volume: 112 Issue: 2 Published: 2018
 Times Cited: 0
 DOI: 10.1063/1.5009184
added
08-Mar-18
2.  Title: Bias-Controlled Spectral Response in GaN/AlN Single-Nanowire Ultraviolet Photodetectors
 Author(s): Spies, M.; den Hertog, M. I.; Hille, P.; et al.
 Source: Nano Letters Volume: 17 Issue: 7 Pages: 4231-4239 Published: 2017
 Times Cited: 4
 DOI: 10.1021/acs.nanolett.7b01118
added
12-Aug-17
3.  Title: Crystal Phase Quantum Well Emission with Digital Control
 Author(s): Assali, S.; Lahnemann, J.; Vu, T. T. T.; et al.
 Source: Nano Letters Volume: 17 Issue: 10 Pages: 6062-6068 Published: 2017
 Times Cited: 1
 DOI: 10.1021/acs.nanolett.7b02489
added
19-Nov-17
4.  Title: Effect of Ge-doping on the short-wave, mid- and far-infrared intersubband transitions in GaN/AlGaN heterostructures
 Author(s): Lim, C. B.; Ajay, A.; Lahnemann, J.; et al.
 Source: Semiconductor Science and Technology Volume: 32 Issue: 12 Published: 2017
 Times Cited: 0
 DOI: 10.1088/1361-6641/aa919c
added
19-Nov-17
5.  Title: Metal-Exchange Catalysis in the Growth of Sesquioxides: Towards Heterostructures of Transparent Oxide Semiconductors
 Author(s): Vogt, P.; Brandt, O.; Riechert, H.; et al.
 Source: Physical Review Letters Volume: 119 Issue: 19 Published: 2017
 Times Cited: 0
 DOI: 10.1103/PhysRevLett.119.196001
added
19-Nov-17
6.  Title: Near-Infrared Intersubband Photodetection in GaN/AlN Nanowires
 Author(s): Lahnemann, J.; Ajay, A.; Den Hertog, M. I.; et al.
 Source: Nano Letters Volume: 17 Issue: 11 Pages: 6954-6960 Published: 2017
 Times Cited: 0
 DOI: 10.1021/acs.nanolett.7b03414
added
21-Dec-17
7.  Title: Photoelectrochemical Properties of GaN Photoanodes with Cobalt Phosphate Catalyst for Solar Water Splitting in Neutral Electrolyte
 Author(s): Kamimura, J.; Bogdanoff, P.; Abdi, F. F.; et al.
 Source: Journal of Physical Chemistry C Volume: 121 Issue: 23 Pages: 12540-12545 Published: 2017
 Times Cited: 3
 DOI: 10.1021/acs.jpcc.7b02253
added
12-Jul-17
8.  Title: Comparison of the Luminous Efficiencies of Ga- and N-Polar InxGa1-xN/InyGa1-yN Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy
 Author(s): Fernandez-Garrido, S.; Lahnemann, J.; Hauswald, C.; et al.
 Source: Physical Review Applied Volume: 6 Issue: 3 Pages: 14 Published: 2016
 Times Cited: 3
 DOI: 10.1103/PhysRevApplied.6.034017
added
14-Oct-16
9.  Title: Effect of doping on the far-infrared intersubband transitions in nonpolar m-plane GaN/AlGaN heterostructures
 Author(s): Lim, C. B.; Ajay, A.; Bougerol, C.; et al.
 Source: Nanotechnology Volume: 27 Issue: 14 Published: 2016
 Times Cited: 5
 DOI: 10.1088/0957-4484/27/14/145201
added
27-Apr-16
10.  Title: Quenching of the luminescence intensity of GaN nanowires under electron beam exposure: impact of C adsorption on the exciton lifetime
 Author(s): Lahnemann, J.; Flissikowski, T.; Wolz, M.; et al.
 Source: Nanotechnology Volume: 27 Issue: 45 Published: 2016
 Times Cited: 2
 DOI: 10.1088/0957-4484/27/45/455706
added
17-Nov-16
publication(s)  
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