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Danielsson, Örjan
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ResearcherID: E-8865-2011
URL: http://www.researcherid.com/rid/E-8865-2011
Subject: Chemistry; Materials Science; Physics; Thermodynamics
Keywords: computational fluid dynamics; chemical vapor deposition; thin films; silicon carbide
ORCID: http://orcid.org/0000-0001-8116-9980
My Institutions (more details)
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Sub-org/Dept: Department of Physics, Chemistry and Biology
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This list contains papers that I have authored.

publication(s)  
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1.  Title: Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC
 Author(s): Yazdanfar, Milan; Danielsson, Orjan; Kalered, Emil; et al.
 Source: Chemistry of Materials Volume: 27 Issue: 3 Pages: 793-801 Published: FEB 10 2015
 Times Cited: 4
 DOI: 10.1021/acs.chemmater.5b00074
added
29-Sep-15
2.  Title: Precursors for carbon doping of GaN in chemical vapor deposition
 Author(s): Li, Xun; Danielsson, Orjan; Pedersen, Henrik; et al.
 Source: Journal of Vacuum Science & Technology B Volume: 33 Issue: 2 Published: MAR 2015
 Times Cited: 11
 DOI: 10.1116/1.4914316
added
29-Sep-15
3.  Title: Carrier Lifetime Controlling Defects Z(1/2) and RB1 in Standard and Chlorinated Chemistry Grown 4H-SiC
 Author(s): Booker, Ian D.; Ul Hassan, Jawad; Lilja, Louise; et al.
 Source: Crystal Growth & Design Volume: 14 Issue: 8 Pages: 4104-4110 Published: AUG 2014
 Times Cited: 2
 DOI: 10.1021/cg5007154
added
29-Sep-15
4.  Title: Finding the Optimum Chloride-Based Chemistry for Chemical Vapor Deposition of SiC
 Author(s): Yazdanfar, Milan; Danielsson, Orjan; Kordina, Olle; et al.
 Source: Ecs Journal of Solid State Science and Technology Volume: 3 Issue: 10 Pages: P320-P323 Published: 2014
 Times Cited: 1
 DOI: 10.1149/2.0111410jss
added
29-Sep-15
5.  Title: On the use of methane as a carbon precursor in Chemical Vapor Deposition of silicon carbide
 Author(s): Yazdanfar, M.; Pedersen, H.; Sukkaew, P.; et al.
 Source: Journal of Crystal Growth Volume: 390 Pages: 24-29 Published: MAR 15 2014
 Times Cited: 6
 DOI: 10.1016/j.jcrysgro.2013.12.033
added
29-Sep-15
6.  Title: Revisiting the Thermochemical Database of Si-C-H System Related to SiC CVD Modeling
 Author(s): Sukkaew, Pitsiri; Ojamae, Lars; Danielsson, Orjan; et al.
 Source: Silicon Carbide and Related Materials 2013, Pts 1 and 2 Volume: 778-780 Pages: 175-178 Published: 2014
 Times Cited: 0
 DOI: 10.4028/www.scientific.net/MSF.778-780.175
added
29-Sep-15
7.  Title: Simulations of SiC CVD - Perspectives on the need for surface reaction model improvements
 Author(s): Danielsson, Orjan; Kordina, Olof; Janzen, Erik; et al.
 Source: Silicon Carbide and Related Materials 2013, Pts 1 and 2 Volume: 778-780 Pages: 218-221 Published: 2014
 Times Cited: 1
 DOI: 10.4028/www.scientific.net/MSF.778-780.218
added
29-Sep-15
8.  Title: Shortcomings of CVD modeling of SiC today
 Author(s): Danielsson, O.; Sukkaew, P.; Ojamae, L.; et al.
 Source: Theoretical Chemistry Accounts Volume: 132 Issue: 11 Published: OCT 1 2013
 Times Cited: 6
 DOI: 10.1007/s00214-013-1398-9
added
29-Sep-15
9.  Title: Simulation of gas-phase chemistry for selected carbon precursors in epitaxial growth of SiC
 Author(s): Danielsson, Orjan; Sukkaew, Pitsiri; Yazdanfar, Milan; et al.
 Source: Silicon Carbide and Related Materials 2012 Volume: 740-742 Pages: 213-216 Published: 2013
 Times Cited: 2
 DOI: 10.4028/www.scientific.net/MSF.740-742.213
added
29-Sep-15
10.  Title: Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide
 Author(s): Leone, S.; Kordina, O.; Henry, A.; et al.
 Source: Crystal Growth & Design Volume: 12 Issue: 4 Pages: 1977-1984 Published: 2012
 Times Cited: 8
 DOI: 10.1021/cg201684e
added
07-Mar-13
publication(s)  
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