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Pedersen, Henrik
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ResearcherID: E-1377-2012
URL: http://www.researcherid.com/rid/E-1377-2012
Subject: Chemistry; Materials Science; Physics
Keywords: chemical vapor deposition; thin films; plasma enhanced chemical vapour deposition; silicon carbide (sic); boron nitride; boron carbide(b4c); amorphous carbon; materials chemistry
ORCID: http://orcid.org/0000-0002-7171-5383
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Department of Physics, Chemistry and Biology
Role:
Past Institutions: Sandvik Machining Solutions R&D
Description:
My URLs: http://se.linkedin.com/pub/henrik-pedersen/31/998/6a0
http://www.ifm.liu.se/chemistry/inorganic-chemistry/staff/henrik-pedersen/
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Incorporation of dopants in epitaxial SiC layers grown with fluorinated CVD chemistry
 Author(s): Stenberg, Pontus; Janzen, Erik; Pedersen, Henrik
 Source: Journal of Vacuum Science & Technology B Volume: 35 Issue: 3 Published: MAY 2017
 Times Cited: 0
 DOI: 10.1116/1.4979279
added
06-Jul-17
2.  Title: Matching precursor kinetics to afford a more robust CVD chemistry: a case study of the C chemistry for silicon carbide using SiF4 as Si precursor
 Author(s): Stenberg, Pontus; Danielsson, Orjan; Erdtman, Edvin; et al.
 Source: Journal of Materials Chemistry C Volume: 5 Issue: 23 Pages: 5818-5823 Published: JUN 21 2017
 Times Cited: 0
 DOI: 10.1039/c7tc00138j
added
06-Jul-17
3.  Title: Recommended reading list of early publications on atomic layer deposition-Outcome of the "Virtual Project on the History of ALD"
 Author(s): Ahvenniemi, Esko; Akbashev, Andrew R.; Ali, Saima; et al.
 Source: Journal of Vacuum Science & Technology a Volume: 35 Issue: 1 Published: JAN-FEB 2017
 Times Cited: 5
 DOI: 10.1116/1.4971389
added
20-Feb-17
4.  Title: Silicon Chemistry in Fluorinated Chemical Vapor Deposition of Silicon Carbide
 Author(s): Stenberg, Pontus; Sukkaew, Pitsiri; Farkas, Ildiko; et al.
 Source: Journal of Physical Chemistry C Volume: 121 Issue: 5 Pages: 2711-2720 Published: FEB 9 2017
 Times Cited: 2
 DOI: 10.1021/acs.jpcc.6b10849
added
06-Jul-17
5.  Title: A model for carbon incorporation from trimethyl gallium in chemical vapor deposition of gallium nitride
 Author(s): Danielsson, Orjan; Li, Xun; Ojamae, Lars; et al.
 Source: Journal of Materials Chemistry C Volume: 4 Issue: 4 Pages: 863-871 Published: 2016
 Times Cited: 3
 DOI: 10.1039/c5tc03989d
added
29-Feb-16
6.  Title: AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
 Author(s): Bergsten, Johan; Li, Xun; Nilsson, Daniel; et al.
 Source: Japanese Journal of Applied Physics Volume: 55 Issue: 5 Published: MAY 2016
 Times Cited: 4
 DOI: 10.7567/JJAP.55.05FK02
added
18-Aug-16
7.  Title: Time as the Fourth Dimension: Opening up New Possibilities in Chemical Vapor Deposition
 Author(s): Pedersen, Henrik
 Source: Chemistry of Materials Volume: 28 Issue: 3 Pages: 691-699 Published: FEB 9 2016
 Times Cited: 2
 DOI: 10.1021/acs.chemmater.5b04553
added
22-Mar-16
8.  Title: Trimethylboron as Single-Source Precursor for Boron-Carbon Thin Film Synthesis by Plasma Chemical Vapor Deposition
 Author(s): Imam, Mewlude; Hoglund, Carina; Jensen, Jens; et al.
 Source: Journal of Physical Chemistry C Volume: 120 Issue: 38 Pages: 21990-21997 Published: SEP 29 2016
 Times Cited: 0
 DOI: 10.1021/acs.jpcc.6b06529
added
20-Feb-17
9.  Title: Brominated Chemistry for Chemical Vapor Deposition of Electronic Grade SiC
 Author(s): Yazdanfar, Milan; Danielsson, Orjan; Kalered, Emil; et al.
 Source: Chemistry of Materials Volume: 27 Issue: 3 Pages: 793-801 Published: FEB 10 2015
 Times Cited: 4
 DOI: 10.1021/acs.chemmater.5b00074
added
27-Apr-15
10.  Title: Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results
 Author(s): Li, X.; Bergsten, J.; Nilsson, D.; et al.
 Source: Applied Physics Letters Volume: 107 Issue: 26 Published: DEC 28 2015
 Times Cited: 6
 DOI: 10.1063/1.4937575
added
15-Feb-16
publication(s)  
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