ResearcherID Thomson Reuters  

Ivanov, Ivan G
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ResearcherID: H-9714-2013
URL: http://www.researcherid.com/rid/H-9714-2013
Subject: Physics
ORCID: http://orcid.org/0000-0003-1000-0437
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Department of Physics, Chemistry and Biology
Role:
My URLs: http://www.ifm.liu.se/materialphysics/semicond/staff/ivan-ivanov/
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC
 Author(s): Asada, Satoshi; Kimoto, Tsunenobu; Ivanov, Ivan G.
 Source: Applied Physics Letters Volume: 111 Issue: 7 Published: AUG 14 2017
 Times Cited: 0
 DOI: 10.1063/1.4989648
added
10-Sep-17
2.  Title: Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys
 Author(s): Milanova, M.; Donchev, V.; Kostov, K. L.; et al.
 Source: Semiconductor Science and Technology Volume: 32 Issue: 8 Published: AUG 2017
 Times Cited: 0
 DOI: 10.1088/1361-6641/aa7404
added
20-Jul-17
3.  Title: In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
 Author(s): Knight, Sean; Hofmann, Tino; Bouhafs, Chamseddine; et al.
 Source: Scientific Reports Volume: 7 Published: JUL 11 2017
 Times Cited: 0
 DOI: 10.1038/s41598-017-05333-w
added
30-Jul-17
4.  Title: Monitoring of epitaxial graphene anodization
 Author(s): Vagin, Mikhail Yu.; Sekretaryova, Alina N.; Ivanov, Ivan G.; et al.
 Source: Electrochimica Acta Volume: 238 Pages: 91-98 Published: JUN 1 2017
 Times Cited: 1
 DOI: 10.1016/j.electacta.2017.04.016
added
08-Jun-17
5.  Title: Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC
 Author(s): Bouhafs, C.; Zakharov, A. A.; Ivanov, I. G.; et al.
 Source: Carbon Volume: 116 Pages: 722-732 Published: MAY 2017
 Times Cited: 1
 DOI: 10.1016/j.carbon.2017.02.026
added
01-May-17
6.  Title: Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy
 Author(s): Donchev, V.; Asenova, I.; Milanova, M.; et al.
 Source: 19th International School on Condensed Matter Physics (Iscmp): Advances in Nanostructured Condensed Matter: Research and Innovations Volume: 794 Published: 2017
 Times Cited: 1
 DOI: 10.1088/1742-6596/794/1/012013
added
20-Jul-17
7.  Title: Rolling performance of carbon nitride-coated bearing components in different lubrication regimes
 Author(s): Bakoglidis, Konstantinos D.; Nedelcu, Ileana; Ivanov, Ivan G.; et al.
 Source: Tribology International Volume: 114 Pages: 141-151 Published: OCT 2017
 Times Cited: 0
 DOI: 10.1016/j.triboint.2017.04.006
added
20-Jul-17
8.  Title: Surface functionalization of epitaxial graphene on SiC by ion irradiation for gas sensing application
 Author(s): Kaushik, Priya Darshni; Ivanov, Ivan G.; Lin, Pin-Cheng; et al.
 Source: Applied Surface Science Volume: 403 Pages: 707-716 Published: MAY 1 2017
 Times Cited: 1
 DOI: 10.1016/j.apsusc.2017.01.111
added
01-May-17
9.  Title: A comparative study of direct current magnetron sputtering and high power impulse magnetron sputtering processes for CNX thin film growth with different inert gases
 Author(s): Schmidt, Susann; Czigany, Zsolt; Wissting, Jonas; et al.
 Source: Diamond and Related Materials Volume: 64 Pages: 13-26 Published: APR 2016
 Times Cited: 7
 DOI: 10.1016/j.diamond.2016.01.009
added
11-Jun-16
10.  Title: Chloride-based SiC growth on a-axis 4H-SiC substrates
 Author(s): Booker, Ian D.; Farkas, Ildiko; Ivanov, Ivan G.; et al.
 Source: Physica B-Condensed Matter Volume: 480 Pages: 23-25 Published: JAN 1 2016
 Times Cited: 0
 DOI: 10.1016/j.physb.2015.08.038
added
29-Dec-15
publication(s)  
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