ResearcherID Thomson Reuters  

Ivanov, Ivan G
Create a ResearcherID badge for this researcher View publications analytics for this researcher
Close
ResearcherID: H-9714-2013
URL: http://www.researcherid.com/rid/H-9714-2013
Subject: Physics
Publons: https://publons.com/a/1358574
ORCID: http://orcid.org/0000-0003-1000-0437
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Department of Physics, Chemistry and Biology
Role:
My URLs: http://www.ifm.liu.se/materialphysics/semicond/staff/ivan-ivanov/
 
 

This list contains papers that I have authored.

publication(s)  
First Page Previous Page Page   of  18  Go Next Page Last Page
  Sort by:    Results per page: 
1.  Title: Quantum Properties of Dichroic Silicon Vacancies in Silicon Carbide
 Author(s): Nagy, Roland; Widmann, Matthias; Niethammer, Matthias; et al.
 Source: Physical Review Applied Volume: 9 Issue: 3 Published: MAR 23 2018
 Times Cited: 0
 DOI: 10.1103/PhysRevApplied.9.034022
added
07-Apr-18
2.  Title: Silicon carbonitride thin films deposited by reactive high power impulse magnetron sputtering
 Author(s): Hanninen, Tuomas; Schmidt, Susann; Ivanov, Ivan G.; et al.
 Source: Surface & Coatings Technology Volume: 335 Pages: 248-256 Published: FEB 15 2018
 Times Cited: 0
 DOI: 10.1016/j.surfcoat.2017.12.037
added
11-Mar-18
3.  Title: Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC
 Author(s): Asada, Satoshi; Kimoto, Tsunenobu; Ivanov, Ivan G.
 Source: Applied Physics Letters Volume: 111 Issue: 7 Published: AUG 14 2017
 Times Cited: 0
 DOI: 10.1063/1.4989648
added
10-Sep-17
4.  Title: Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys
 Author(s): Milanova, M.; Donchev, V.; Kostov, K. L.; et al.
 Source: Semiconductor Science and Technology Volume: 32 Issue: 8 Published: AUG 2017
 Times Cited: 0
 DOI: 10.1088/1361-6641/aa7404
added
20-Jul-17
5.  Title: Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
 Author(s): Yakimova, Rositsa; Ivanov, Ivan G.; Vines, Lasse; et al.
 Source: Ecs Journal of Solid State Science and Technology Volume: 6 Issue: 10 Pages: P741-P745 Published: 2017
 Times Cited: 0
 DOI: 10.1149/2.0281710jss
added
04-Jan-18
6.  Title: Growth, Defects and Doping of 3C-SiC on Hexagonal Polytypes
 Author(s): Yakimova, R.; Ivanov, I. G.; Vines, L.; et al.
 Source: Gallium Nitride and Silicon Carbide Power Technologies 7 Volume: 80 Issue: 7 Pages: 107-115 Published: 2017
 Times Cited: 0
 DOI: 10.1149/08007.0107ecst
added
01-Apr-18
7.  Title: In-situ terahertz optical Hall effect measurements of ambient effects on free charge carrier properties of epitaxial graphene
 Author(s): Knight, Sean; Hofmann, Tino; Bouhafs, Chamseddine; et al.
 Source: Scientific Reports Volume: 7 Published: JUL 11 2017
 Times Cited: 0
 DOI: 10.1038/s41598-017-05333-w
added
30-Jul-17
8.  Title: Monitoring of epitaxial graphene anodization
 Author(s): Vagin, Mikhail Yu.; Sekretaryova, Alina N.; Ivanov, Ivan G.; et al.
 Source: Electrochimica Acta Volume: 238 Pages: 91-98 Published: JUN 1 2017
 Times Cited: 1
 DOI: 10.1016/j.electacta.2017.04.016
added
08-Jun-17
9.  Title: Multi-scale investigation of interface properties, stacking order and decoupling of few layer graphene on C-face 4H-SiC
 Author(s): Bouhafs, C.; Zakharov, A. A.; Ivanov, I. G.; et al.
 Source: Carbon Volume: 116 Pages: 722-732 Published: MAY 2017
 Times Cited: 5
 DOI: 10.1016/j.carbon.2017.02.026
added
01-May-17
10.  Title: Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy
 Author(s): Donchev, V.; Asenova, I.; Milanova, M.; et al.
 Source: 19th International School on Condensed Matter Physics (Iscmp): Advances in Nanostructured Condensed Matter: Research and Innovations Volume: 794 Published: 2017
 Times Cited: 2
 DOI: 10.1088/1742-6596/794/1/012013
added
20-Jul-17
publication(s)  
First Page Previous Page Page   of  18  Go Next Page Last Page
  Sort by:    Results per page: