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Georgakilas, Alexandros
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ResearcherID: G-7944-2011
URL: http://www.researcherid.com/rid/G-7944-2011
Subject: Engineering; Materials Science; Physics
Keywords: iii-nitride semiconductor materials and devices; molecular beam epitaxy; iii-v semiconductors; transistor; sensor; nanowires; nanoelectronics; optoelectronics
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Department of Physics
Role:
Joint Affiliation:
Sub-org/Dept: Institute of Electronic Structure and Laser / Microelectronics Research Group
Role:
Description:
My URLs: http://www.physics.uoc.gr/en/faculty/georgakilas.php
 
 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Current conduction mechanism and electrical break-down in InN grown on GaN
 Author(s): Kuzmik, J.; Fleury, C.; Adikimenakis, A.; et al.
 Source: Applied Physics Letters Volume: 110 Issue: 23 Published: JUN 5 2017
 Times Cited: 0
 DOI: 10.1063/1.4985128
added
07-Jul-17
2.  Title: Investigation of thin InN/GaN heterostructures with in situ SiNx dielectric grown by plasma-assisted molecular beam epitaxy
 Author(s): Zervos, Christos; Adikimenakis, Adam; Beleniotis, Petros; et al.
 Source: Journal of Vacuum Science & Technology B Volume: 35 Issue: 2 Published: MAR 2017
 Times Cited: 0
 DOI: 10.1116/1.4977606
added
07-Jul-17
3.  Title: Analysis of current instabilities of thin AlN/GaN/AlN double heterostructure high electron mobility transistors
 Author(s): Zervos, Ch; Adikimenakis, A.; Bairamis, A.; et al.
 Source: Semiconductor Science and Technology Volume: 31 Issue: 6 Published: JUN 2016
 Times Cited: 0
 DOI: 10.1088/0268-1242/31/6/065002
added
20-Oct-16
4.  Title: In-situ SiNx/InN structures for InN field-effect transistors
 Author(s): Zervos, Ch.; Adikimenakis, A.; Beleniotis, P.; et al.
 Source: Applied Physics Letters Volume: 108 Issue: 14 Published: APR 4 2016
 Times Cited: 3
 DOI: 10.1063/1.4945668
added
20-Oct-16
5.  Title: Selective-area growth of GaN nanowires on SiO2-masked Si (111) substrates by molecular beam epitaxy
 Author(s): Kruse, J. E.; Lymperakis, L.; Eftychis, S.; et al.
 Source: Journal of Applied Physics Volume: 119 Issue: 22 Published: JUN 14 2016
 Times Cited: 1
 DOI: 10.1063/1.4953594
added
20-Oct-16
6.  Title: Understanding the effects of Si (111) nitridation on the spontaneous growth and properties of GaN nanowires
 Author(s): Eftychis, S.; Kruse, J.; Koukoula, T.; et al.
 Source: Journal of Crystal Growth Volume: 442 Pages: 8-13 Published: MAY 15 2016
 Times Cited: 1
added
20-Oct-16
7.  Title: Angular-dependent Raman study of alpha- and s-plane InN
 Author(s): Filintoglou, K.; Katsikini, M.; Arvanitidis, J.; et al.
 Source: Journal of Applied Physics Volume: 117 Issue: 7 Published: FEB 21 2015
 Times Cited: 2
 DOI: 10.1063/1.4908541
added
30-Sep-15
8.  Title: Direct spontaneous growth and interfacial structural properties of inclined GaN nanopillars on r-plane sapphire
 Author(s): Adikimenakis, A.; Lotsari, A.; Dimitrakopulos, G. P.; et al.
 Source: Journal of Applied Physics Volume: 117 Issue: 24 Published: JUN 28 2015
 Times Cited: 0
 DOI: 10.1063/1.4923034
added
30-Sep-15
9.  Title: Elimination of surface band bending on N-polar InN with thin GaN capping
 Author(s): Kuzmik, J.; Hascik, S.; Kucera, M.; et al.
 Source: Applied Physics Letters Volume: 107 Issue: 19 Published: NOV 9 2015
 Times Cited: 3
 DOI: 10.1063/1.4935615
added
18-Jan-16
10.  Title: GaN heterostructures with diamond and graphene
 Author(s): Pecz, B.; Toth, L.; Tsiakatouras, G.; et al.
 Source: Semiconductor Science and Technology Volume: 30 Issue: 11 Published: NOV 2015
 Times Cited: 2
 DOI: 10.1088/0268-1242/30/11/114001
added
18-Jan-16
publication(s)  
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