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Sun, Jianwu
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ResearcherID: F-4601-2011
URL: http://www.researcherid.com/rid/F-4601-2011
Subject: Materials Science; Physics
ORCID: http://orcid.org/0000-0002-6403-3720
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This list contains papers that I have authored.

publication(s)  
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1.  Title: Nitrogen-related recombination mechanisms in p-type ZnO films grown by plasma-assisted molecular beam epitaxy
 Author(s): Sun, J. W.; Lu, Y. M.; Liu, Y. C.; et al.
 Source: Journal of Applied Physics Volume: 102 Issue: 4 Published: 2007
 Times Cited: 49
 DOI: 10.1063/1.2772581
added
01-Mar-16
2.  Title: Excitonic electroluminescence from ZnO-based heterojunction light emitting diodes
 Author(s): Sun, J. W.; Lu, Y. M.; Liu, Y. C.; et al.
 Source: Journal of Physics D-Applied Physics Volume: 41 Issue: 15 Published: 2008
 Times Cited: 33
 DOI: 10.1088/0022-3727/41/15/155103
added
01-Mar-16
3.  Title: Local chemical states and thermal stabilities of nitrogen dopants in ZnO film studied by temperature-dependent x-ray photoelectron spectroscopy
 Author(s): Li, X. H.; Xu, H. Y.; Zhang, X. T.; et al.
 Source: Applied Physics Letters Volume: 95 Issue: 19 Published: 2009
 Times Cited: 32
 DOI: 10.1063/1.3259644
added
01-Mar-16
4.  Title: The activation energy of the nitrogen acceptor in p-type ZnO film grown by plasma-assisted molecular beam epitaxy
 Author(s): Sun, J. W.; Lu, Y. M.; Liu, Y. C.; et al.
 Source: Solid State Communications Volume: 140 Issue: 7-8 Pages: 345-348 Published: 2006
 Times Cited: 22
 DOI: 10.1016/j.ssc.2006.09.007
added
01-Mar-16
5.  Title: Fluorescent SiC as a new material for white LEDs
 Author(s): Syvajarvi, M.; Mueller, J.; Sun, J. W.; et al.
 Source: Physica Scripta Volume: T148 Published: 2012
 Times Cited: 21
 DOI: 10.1088/0031-8949/2012/t148/014002
added
01-Mar-16
6.  Title: Hole transport in p-type ZnO films grown by plasma-assisted molecular beam epitaxy
 Author(s): Sun, J. W.; Lu, Y. M.; Liu, Y. C.; et al.
 Source: Applied Physics Letters Volume: 89 Issue: 23 Published: 2006
 Times Cited: 20
 DOI: 10.1063/1.2398908
added
01-Mar-16
7.  Title: Considerably long carrier lifetimes in high-quality 3C-SiC(111)
 Author(s): Sun, J. W.; Ivanov, I. G.; Liljedahl, R.; et al.
 Source: Applied Physics Letters Volume: 100 Issue: 25 Published: 2012
 Times Cited: 17
 DOI: 10.1063/1.4729583
added
01-Mar-16
8.  Title: Advances in wide bandgap SiC for optoelectronics
 Author(s): Ou, Haiyan; Ou, Yiyu; Argyraki, Aikaterini; et al.
 Source: European Physical Journal B Volume: 87 Issue: 3 Published: 2014
 Times Cited: 15
 DOI: 10.1140/epjb/e2014-41100-0
added
01-Mar-16
9.  Title: Ultimate nano-electronics: New materials and device concepts for scaling nano-electronics beyond the Si roadmap
 Author(s): Collaert, N.; Alian, A.; Arimura, H.; et al.
 Source: Microelectronic Engineering Volume: 132 Pages: 218-225 Published: 2015
 Times Cited: 14
 DOI: 10.1016/j.mee.2014.08.005
added
01-Mar-16
10.  Title: Substantial photo-response of InGaN p-i-n homojunction solar cells
 Author(s): Zeng, S. W.; Zhang, B. P.; Sun, J. W.; et al.
 Source: Semiconductor Science and Technology Volume: 24 Issue: 5 Published: 2009
 Times Cited: 13
 DOI: 10.1088/0268-1242/24/5/055009
added
01-Mar-16
publication(s)  
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