ResearcherID.com
ResearcherID Thomson Reuters  

Klimeck, Gerhard
Create a ResearcherID badge for this researcher View publications analytics for this researcher
Close
ResearcherID: A-1414-2012
URL: http://www.researcherid.com/rid/A-1414-2012
Subject: Engineering; Optics
Keywords: nanoelectronics; genetic algorithm and applications; parallel and distributed computing; solid state; high performance computing (hpc); tight binding; nanotransistor; quantum dots
ORCID: http://orcid.org/0000-0001-7128-773X
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Electrical and Computer Engineering
Role:
Description:
My URLs: http://nanohub.org/klimeck
https://engineering.purdue.edu/gekcogrp/
 

Publication Groups

Publication List 1 (219)

 

This list contains papers that I have authored.

publication(s)  
First Page Previous Page Page   of  54  Go Next Page Last Page
  Sort by:    Results per page: 
1. Title: Single and multiband modeling of quantum electron transport through layered semiconductor devices
Author(s): Lake, R.; Klimeck, G.; Bowen, R. C.; et al.
Source: Journal of Applied Physics Volume: 81 Issue: 12 Pages: 7845-7869 Published: 1997
Times Cited: 475
DOI: 10.1063/1.365394
added
12-Feb-12
2. Title: Single and multiband modeling of quantum electron transport through layered semiconductor devices
Author(s): Lake, R.; Klimeck, G.; Bowen, R.C.; et al.
Source: Journal of Applied Physics Volume: 81 Issue: 12 Pages: 7845-7869 Published: 1997
Times Cited: 475
DOI: 10.1063/1.365394 / Author-provided URL : http://www.scopus.com/inward/record.url?eid=2-s2.0-0342723158&partnerID=MN8TOARS
added
24-Apr-14
3. Title: Valence band effective-mass expressions in the sp(3)d(5)s(*) empirical tight-binding model applied to a Si and Ge parametrization
Author(s): Boykin, T. B.; Klimeck, G.; Oyafuso, F.
Source: Physical Review B Volume: 69 Issue: 11 Published: 2004
Times Cited: 180
DOI: 115201 10.1103/PhysRevB.69.115201
added
12-Feb-12
4. Title: Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
Author(s): Lansbergen, G. P.; Rahman, R.; Wellard, C. J.; et al.
Source: Nature Physics Volume: 4 Issue: 8 Pages: 656-661 Published: 2008
Times Cited: 168
DOI: 10.1038/nphys994
added
12-Feb-12
5. Title: Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
Author(s): Lansbergen, G.P.; Rahman, R.; Wellard, C.J.; et al.
Source: Nature Physics Volume: 4 Issue: 8 Pages: 656-661 Published: 2008
Times Cited: 168
DOI: 10.1038/nphys994 / Author-provided URL : http://www.scopus.com/inward/record.url?eid=2-s2.0-48749117974&partnerID=MN8TOAR ...
added
24-Apr-14
6. Title: Development of a nanoelectronic 3-D (NEMO 3-D) simulator for multimillion atom simulations and its application to alloyed quantum dots
Author(s): Klimeck, G.; Oyafuso, F.; Boykin, T. B.; et al.
Source: Cmes-Computer Modeling in Engineering & Sciences Volume: 3 Issue: 5 Pages: 601-642 Published: 2002
Times Cited: 130
added
12-Feb-12
7. Title: A single-atom transistor
Author(s): Fuechsle, M.; Miwa, J.A.; Mahapatra, S.; et al.
Source: Nature Nanotechnology Volume: 7 Issue: 4 Pages: 242-246 Published: 2012
Times Cited: 119
DOI: 10.1038/NNANO.2012.21 / Author-provided URL : http://www.scopus.com/inward/record.url?eid=2-s2.0-84862776787&partnerID=MN8TOAR ...
added
24-Apr-14
8. Title: Atomistic simulation of nanowires in the sp(3)d(5)s(*) tight-binding formalism: From boundary conditions to strain calculations
Author(s): Luisier, Mathieu; Schenk, Andreas; Fichtner, Wolfgang; et al.
Source: Physical Review B Volume: 74 Issue: 20 Published: 2006
Times Cited: 115
DOI: 205323 10.1103/PhysRevB.74.205323
added
12-Feb-12
9. Title: Atomistic simulation of nanowires in the s p3 d5 s* tight-binding formalism: From boundary conditions to strain calculations
Author(s): Luisier, M.; Schenk, A.; Fichtner, W.; et al.
Source: Physical Review B - Condensed Matter and Materials Physics Volume: 74 Issue: 20 Published: 2006
Times Cited: 115
DOI: 10.1103/PhysRevB.74.205323 / Author-provided URL : http://www.scopus.com/inward/record.url?eid=2-s2.0-33751181011&partnerID=MN8TOAR ...
added
24-Apr-14
10. Title: Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures
Author(s): Lee, S.; Oyafuso, F.; von Allmen, P.; et al.
Source: Physical Review B Volume: 69 Issue: 4 Published: 2004
Times Cited: 110
DOI: 045316 10.1103/PhysRevB.69.045316
added
12-Feb-12
publication(s)  
First Page Previous Page Page   of  54  Go Next Page Last Page
  Sort by:    Results per page: