Title: Single and multiband modeling of quantum electron transport through layered semiconductor devices Author(s): Lake, R.; Klimeck, G.; Bowen, R. C.; et al. Source: Journal of Applied Physics Volume: 81 Issue: 12 Pages: 7845-7869 Published: 1997 Times Cited: 469 DOI: 10.1063/1.365394
added
12-Feb-12
2.
Title: Valence band effective-mass expressions in the sp(3)d(5)s(*) empirical tight-binding model applied to a Si and Ge parametrization Author(s): Boykin, T. B.; Klimeck, G.; Oyafuso, F. Source: Physical Review B Volume: 69 Issue: 11 Published: 2004 Times Cited: 177 DOI: 115201
10.1103/PhysRevB.69.115201
added
12-Feb-12
3.
Title: Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET Author(s): Lansbergen, G. P.; Rahman, R.; Wellard, C. J.; et al. Source: Nature Physics Volume: 4 Issue: 8 Pages: 656-661 Published: 2008 Times Cited: 161 DOI: 10.1038/nphys994
added
12-Feb-12
4.
Title: Development of a nanoelectronic 3-D (NEMO 3-D) simulator for multimillion atom simulations and its application to alloyed quantum dots Author(s): Klimeck, G.; Oyafuso, F.; Boykin, T. B.; et al. Source: Cmes-Computer Modeling in Engineering & Sciences Volume: 3 Issue: 5 Pages: 601-642 Published: 2002 Times Cited: 129
added
12-Feb-12
5.
Title: Atomistic simulation of nanowires in the sp(3)d(5)s(*) tight-binding formalism: From boundary conditions to strain calculations Author(s): Luisier, Mathieu; Schenk, Andreas; Fichtner, Wolfgang; et al. Source: Physical Review B Volume: 74 Issue: 20 Published: 2006 Times Cited: 112 DOI: 205323
10.1103/PhysRevB.74.205323
added
12-Feb-12
6.
Title: Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures Author(s): Lee, S.; Oyafuso, F.; von Allmen, P.; et al. Source: Physical Review B Volume: 69 Issue: 4 Published: 2004 Times Cited: 106 DOI: 045316
10.1103/PhysRevB.69.045316
added
12-Feb-12
7.
Title: Electronic properties of silicon nanowires Author(s): Zheng, Y.; Rivas, C.; Lake, R.; et al. Source: Ieee Transactions on Electron Devices Volume: 52 Issue: 6 Pages: 1097-1103 Published: 2005 Times Cited: 105 DOI: 10.1109/ted.2005.848077
added
12-Feb-12
8.
Title: On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors Author(s): Wang, J.; Rahman, A.; Ghosh, A.; et al. Source: Ieee Transactions on Electron Devices Volume: 52 Issue: 7 Pages: 1589-1595 Published: 2005 Times Cited: 102 DOI: 10.1109/ted.2005.850945
added
12-Feb-12
9.
Title: Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory Author(s): Boykin, T. B.; Klimeck, G.; Bowen, R. C.; et al. Source: Physical Review B Volume: 66 Issue: 12 Published: 2002 Times Cited: 98 DOI: 125207
10.1103/PhysRevB.66.125207
added
12-Feb-12
10.
Title: CONDUCTANCE SPECTROSCOPY IN COUPLED QUANTUM DOTS Author(s): Klimeck, G.; Chen, G.; Datta, S. Source: Physical Review B Volume: 50 Issue: 4 Pages: 2316-2324 Published: 1994 Times Cited: 95 DOI: 10.1103/PhysRevB.50.2316
