ResearcherID.com
ResearcherID Thomson Reuters  

Klimeck, Gerhard
Create a ResearcherID badge for this researcher View publications analytics for this researcher
Close
ResearcherID: A-1414-2012
URL: http://www.researcherid.com/rid/A-1414-2012
Keywords: nanoelectronics; genetic algorithm and applications; parallel and distributed computing; solid state
ORCID: http://orcid.org/0000-0001-7128-773X
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Electrical and Computer Engineering
Role:
My URLs: http://nanohub.org/klimeck
https://engineering.purdue.edu/gekcogrp/
 

Publication Groups

Publication List 1 (219)

 

This list contains papers that I have authored.

publication(s)  
First Page Previous Page Page   of  25  Go Next Page Last Page
  Sort by:    Results per page: 
1. Title: Single and multiband modeling of quantum electron transport through layered semiconductor devices
Author(s): Lake, R.; Klimeck, G.; Bowen, R. C.; et al.
Source: Journal of Applied Physics Volume: 81 Issue: 12 Pages: 7845-7869 Published: 1997
Times Cited: 469
DOI: 10.1063/1.365394
added
12-Feb-12
2. Title: Valence band effective-mass expressions in the sp(3)d(5)s(*) empirical tight-binding model applied to a Si and Ge parametrization
Author(s): Boykin, T. B.; Klimeck, G.; Oyafuso, F.
Source: Physical Review B Volume: 69 Issue: 11 Published: 2004
Times Cited: 177
DOI: 115201 10.1103/PhysRevB.69.115201
added
12-Feb-12
3. Title: Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
Author(s): Lansbergen, G. P.; Rahman, R.; Wellard, C. J.; et al.
Source: Nature Physics Volume: 4 Issue: 8 Pages: 656-661 Published: 2008
Times Cited: 161
DOI: 10.1038/nphys994
added
12-Feb-12
4. Title: Development of a nanoelectronic 3-D (NEMO 3-D) simulator for multimillion atom simulations and its application to alloyed quantum dots
Author(s): Klimeck, G.; Oyafuso, F.; Boykin, T. B.; et al.
Source: Cmes-Computer Modeling in Engineering & Sciences Volume: 3 Issue: 5 Pages: 601-642 Published: 2002
Times Cited: 129
added
12-Feb-12
5. Title: Atomistic simulation of nanowires in the sp(3)d(5)s(*) tight-binding formalism: From boundary conditions to strain calculations
Author(s): Luisier, Mathieu; Schenk, Andreas; Fichtner, Wolfgang; et al.
Source: Physical Review B Volume: 74 Issue: 20 Published: 2006
Times Cited: 112
DOI: 205323 10.1103/PhysRevB.74.205323
added
12-Feb-12
6. Title: Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures
Author(s): Lee, S.; Oyafuso, F.; von Allmen, P.; et al.
Source: Physical Review B Volume: 69 Issue: 4 Published: 2004
Times Cited: 106
DOI: 045316 10.1103/PhysRevB.69.045316
added
12-Feb-12
7. Title: Electronic properties of silicon nanowires
Author(s): Zheng, Y.; Rivas, C.; Lake, R.; et al.
Source: Ieee Transactions on Electron Devices Volume: 52 Issue: 6 Pages: 1097-1103 Published: 2005
Times Cited: 105
DOI: 10.1109/ted.2005.848077
added
12-Feb-12
8. Title: On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors
Author(s): Wang, J.; Rahman, A.; Ghosh, A.; et al.
Source: Ieee Transactions on Electron Devices Volume: 52 Issue: 7 Pages: 1589-1595 Published: 2005
Times Cited: 102
DOI: 10.1109/ted.2005.850945
added
12-Feb-12
9. Title: Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory
Author(s): Boykin, T. B.; Klimeck, G.; Bowen, R. C.; et al.
Source: Physical Review B Volume: 66 Issue: 12 Published: 2002
Times Cited: 98
DOI: 125207 10.1103/PhysRevB.66.125207
added
12-Feb-12
10. Title: CONDUCTANCE SPECTROSCOPY IN COUPLED QUANTUM DOTS
Author(s): Klimeck, G.; Chen, G.; Datta, S.
Source: Physical Review B Volume: 50 Issue: 4 Pages: 2316-2324 Published: 1994
Times Cited: 95
DOI: 10.1103/PhysRevB.50.2316
added
12-Feb-12
publication(s)  
First Page Previous Page Page   of  25  Go Next Page Last Page
  Sort by:    Results per page: