Title: Single and multiband modeling of quantum electron transport through layered semiconductor devices Author(s): Lake, R.; Klimeck, G.; Bowen, R. C.; et al. Source: Journal of Applied Physics Volume: 81 Issue: 12 Pages: 7845-7869 Published: 1997 Times Cited: 592 DOI: 10.1063/1.365394
added
13-Feb-12
2.
Title: A single-atom transistor Author(s): Fuechsle, M.; Miwa, J.A.; Mahapatra, S.; et al. Source: Nature Nanotechnology Volume: 7 Issue: 4 Pages: 242-246 Published: 2012 Times Cited: 388 DOI: 10.1038/NNANO.2012.21 / Author-provided URL :
added
24-Apr-14
3.
Title: Valence band effective-mass expressions in the sp(3)d(5)s(*) empirical tight-binding model applied to a Si and Ge parametrization Author(s): Boykin, T. B.; Klimeck, G.; Oyafuso, F. Source: Physical Review B Volume: 69 Issue: 11 Published: 2004 Times Cited: 258 DOI: 115201
10.1103/PhysRevB.69.115201
added
13-Feb-12
4.
Title: Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET Author(s): Lansbergen, G. P.; Rahman, R.; Wellard, C. J.; et al. Source: Nature Physics Volume: 4 Issue: 8 Pages: 656-661 Published: 2008 Times Cited: 239 DOI: 10.1038/nphys994
added
13-Feb-12
5.
Title: Atomistic simulation of nanowires in the sp(3)d(5)s(*) tight-binding formalism: From boundary conditions to strain calculations Author(s): Luisier, Mathieu; Schenk, Andreas; Fichtner, Wolfgang; et al. Source: Physical Review B Volume: 74 Issue: 20 Published: 2006 Times Cited: 230 DOI: 205323
10.1103/PhysRevB.74.205323
added
13-Feb-12
6.
Title: Ohm's Law Survives to the Atomic Scale Author(s): Weber, B.; Mahapatra, S.; Ryu, H.; et al. Source: Science Volume: 335 Issue: 6064 Pages: 64-67 Published: 2012 Times Cited: 184 DOI: 10.1126/science.1214319
added
13-Feb-12
7.
Title: Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory Author(s): Boykin, T. B.; Klimeck, G.; Bowen, R. C.; et al. Source: Physical Review B Volume: 66 Issue: 12 Published: 2002 Times Cited: 164 DOI: 125207
10.1103/PhysRevB.66.125207
added
13-Feb-12
8.
Title: Development of a nanoelectronic 3-D (NEMO 3-D) simulator for multimillion atom simulations and its application to alloyed quantum dots Author(s): Klimeck, G.; Oyafuso, F.; Boykin, T. B.; et al. Source: Cmes-Computer Modeling in Engineering & Sciences Volume: 3 Issue: 5 Pages: 601-642 Published: 2002 Times Cited: 158
added
13-Feb-12
9.
Title: Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures Author(s): Lee, S.; Oyafuso, F.; von Allmen, P.; et al. Source: Physical Review B Volume: 69 Issue: 4 Published: 2004 Times Cited: 154 DOI: 045316
10.1103/PhysRevB.69.045316
added
13-Feb-12
10.
Title: Atomistic simulation of realistically sized nanodevices using NEMO 3-D - Part I: Models and benchmarks Author(s): Klimeck, Gerhard; Ahmed, Shaikh Shahid; Bae, Hansang; et al. Source: Ieee Transactions on Electron Devices Volume: 54 Issue: 9 Pages: 2079-2089 Published: 2007 Times Cited: 143 DOI: 10.1109/ted.2007.902879