Gerhard Klimeck A-1414-2012 - ResearcherID.com

Klimeck, Gerhard

ResearcherID:	A-1414-2012
URL:	http://www.researcherid.com/rid/A-1414-2012
Subject:	Engineering; Optics
Keywords:	nanoelectronics; genetic algorithm and applications; parallel and distributed computing; solid state; high performance computing (hpc); tight binding; nanotransistor; quantum dots
ORCID:	http://orcid.org/0000-0001-7128-773X

My Institutions (more details)
Primary Institution:	Purdue University
Sub-org/Dept:	Electrical and Computer Engineering
Role:	Faculty

Description:

Gerhard Klimeck is the Reilly Director of the Center for Predictive Materials and Devices (c-PRIMED) and the Network for Computational Nanotechnology (NCN) and a Professor of Electrical and Computer Engineering at Purdue University. He is a fellow of the Institute of Physics,a fellow of the American Physical Society, a Fellow of IEEE and member of HKN and TBP. He guides the technical developments and strategies of nanoHUB.org which annually serves over 1/4 million users worldwide with on-line simulation, tutorials, and seminars in the year 2012. Prof. Klimeck’s research interest is in the modeling of nanoelectronic devices, parallel cluster computing, and genetic algorithms. He drives the development of the Nanoelectronic Modeling Tool NEMO5. Dr. Klimeck was the Technical Group Supervisor of the High Performance Computing Group and a Principal Scientist at the NASA Jet Propulsion Laboratory. Previously he was a member of technical staff at the Central Research Lab of Texas Instruments.

My URLs:

http://nanohub.org/klimeck
https://engineering.purdue.edu/gekcogrp/

	My Publications My Publications (482) View Publications Citation Metrics ResearcherID labs Create A Badge Collaboration Network Citing Articles Network Publication Groups Publication List 1 (219) View Publications Citation Metrics

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482 publication(s)

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1.	Title: Single and multiband modeling of quantum electron transport through layered semiconductor devices Author(s): Lake, R.; Klimeck, G.; Bowen, R. C.; et al. Source: Journal of Applied Physics Volume: 81 Issue: 12 Pages: 7845-7869 Published: 1997 Times Cited: 489 DOI: 10.1063/1.365394	added 12-Feb-12
2.	Title: Valence band effective-mass expressions in the sp(3)d(5)s(*) empirical tight-binding model applied to a Si and Ge parametrization Author(s): Boykin, T. B.; Klimeck, G.; Oyafuso, F. Source: Physical Review B Volume: 69 Issue: 11 Published: 2004 Times Cited: 197 DOI: 115201 10.1103/PhysRevB.69.115201	added 12-Feb-12
3.	Title: Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET Author(s): Lansbergen, G. P.; Rahman, R.; Wellard, C. J.; et al. Source: Nature Physics Volume: 4 Issue: 8 Pages: 656-661 Published: 2008 Times Cited: 177 DOI: 10.1038/nphys994	added 12-Feb-12
4.	Title: A single-atom transistor Author(s): Fuechsle, M.; Miwa, J.A.; Mahapatra, S.; et al. Source: Nature Nanotechnology Volume: 7 Issue: 4 Pages: 242-246 Published: 2012 Times Cited: 157 DOI: 10.1038/NNANO.2012.21 / Author-provided URL :	added 24-Apr-14
5.	Title: Development of a nanoelectronic 3-D (NEMO 3-D) simulator for multimillion atom simulations and its application to alloyed quantum dots Author(s): Klimeck, G.; Oyafuso, F.; Boykin, T. B.; et al. Source: Cmes-Computer Modeling in Engineering & Sciences Volume: 3 Issue: 5 Pages: 601-642 Published: 2002 Times Cited: 135	added 12-Feb-12
6.	Title: Atomistic simulation of nanowires in the sp(3)d(5)s(*) tight-binding formalism: From boundary conditions to strain calculations Author(s): Luisier, Mathieu; Schenk, Andreas; Fichtner, Wolfgang; et al. Source: Physical Review B Volume: 74 Issue: 20 Published: 2006 Times Cited: 127 DOI: 205323 10.1103/PhysRevB.74.205323	added 12-Feb-12
7.	Title: Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures Author(s): Lee, S.; Oyafuso, F.; von Allmen, P.; et al. Source: Physical Review B Volume: 69 Issue: 4 Published: 2004 Times Cited: 115 DOI: 045316 10.1103/PhysRevB.69.045316	added 12-Feb-12
8.	Title: Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory Author(s): Boykin, T. B.; Klimeck, G.; Bowen, R. C.; et al. Source: Physical Review B Volume: 66 Issue: 12 Published: 2002 Times Cited: 113 DOI: 125207 10.1103/PhysRevB.66.125207	added 12-Feb-12
9.	Title: On the validity of the parabolic effective-mass approximation for the I-V calculation of silicon nanowire transistors Author(s): Wang, J.; Rahman, A.; Ghosh, A.; et al. Source: Ieee Transactions on Electron Devices Volume: 52 Issue: 7 Pages: 1589-1595 Published: 2005 Times Cited: 109 DOI: 10.1109/ted.2005.850945	added 12-Feb-12
10.	Title: Electronic properties of silicon nanowires Author(s): Zheng, Y.; Rivas, C.; Lake, R.; et al. Source: Ieee Transactions on Electron Devices Volume: 52 Issue: 6 Pages: 1097-1103 Published: 2005 Times Cited: 109 DOI: 10.1109/ted.2005.848077	added 12-Feb-12

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