ResearcherID Thomson Reuters  

Klimeck, Gerhard
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ResearcherID: A-1414-2012
URL: http://www.researcherid.com/rid/A-1414-2012
Subject: Computer Science; Engineering; Optics
Keywords: nanoelectronics; genetic algorithm and applications; parallel and distributed computing; solid state; high performance computing (hpc); tight binding; nanotransistor; quantum dots
ORCID: http://orcid.org/0000-0001-7128-773X
My Institutions (more details)
Primary Institution:
Sub-org/Dept: Electrical and Computer Engineering
Role:
Description:
My URLs: http://nanohub.org/klimeck
https://engineering.purdue.edu/gekcogrp/
 

Publication Groups

Publication List 1 (219)

 

This list contains papers that I have authored.

publication(s)  
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1.  Title: Single and multiband modeling of quantum electron transport through layered semiconductor devices
 Author(s): Lake, R.; Klimeck, G.; Bowen, R. C.; et al.
 Source: Journal of Applied Physics Volume: 81 Issue: 12 Pages: 7845-7869 Published: 1997
 Times Cited: 564
 DOI: 10.1063/1.365394
added
12-Feb-12
2.  Title: A single-atom transistor
 Author(s): Fuechsle, M.; Miwa, J.A.; Mahapatra, S.; et al.
 Source: Nature Nanotechnology Volume: 7 Issue: 4 Pages: 242-246 Published: 2012
 Times Cited: 325
 DOI: 10.1038/NNANO.2012.21 /  Author-provided URL : http://www.scopus.com/inward/record.url?eid=2-s2.0-84862776787&partnerID=MN8TOAR ...
added
24-Apr-14
3.  Title: Valence band effective-mass expressions in the sp(3)d(5)s(*) empirical tight-binding model applied to a Si and Ge parametrization
 Author(s): Boykin, T. B.; Klimeck, G.; Oyafuso, F.
 Source: Physical Review B Volume: 69 Issue: 11 Published: 2004
 Times Cited: 244
 DOI: 115201 10.1103/PhysRevB.69.115201
added
12-Feb-12
4.  Title: Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET
 Author(s): Lansbergen, G. P.; Rahman, R.; Wellard, C. J.; et al.
 Source: Nature Physics Volume: 4 Issue: 8 Pages: 656-661 Published: 2008
 Times Cited: 221
 DOI: 10.1038/nphys994
added
12-Feb-12
5.  Title: Atomistic simulation of nanowires in the sp(3)d(5)s(*) tight-binding formalism: From boundary conditions to strain calculations
 Author(s): Luisier, Mathieu; Schenk, Andreas; Fichtner, Wolfgang; et al.
 Source: Physical Review B Volume: 74 Issue: 20 Published: 2006
 Times Cited: 203
 DOI: 205323 10.1103/PhysRevB.74.205323
added
12-Feb-12
6.  Title: Development of a nanoelectronic 3-D (NEMO 3-D) simulator for multimillion atom simulations and its application to alloyed quantum dots
 Author(s): Klimeck, G.; Oyafuso, F.; Boykin, T. B.; et al.
 Source: Cmes-Computer Modeling in Engineering & Sciences Volume: 3 Issue: 5 Pages: 601-642 Published: 2002
 Times Cited: 156
added
12-Feb-12
7.  Title: Ohm's Law Survives to the Atomic Scale
 Author(s): Weber, B.; Mahapatra, S.; Ryu, H.; et al.
 Source: Science Volume: 335 Issue: 6064 Pages: 64-67 Published: 2012
 Times Cited: 155
 DOI: 10.1126/science.1214319
added
12-Feb-12
8.  Title: Diagonal parameter shifts due to nearest-neighbor displacements in empirical tight-binding theory
 Author(s): Boykin, T. B.; Klimeck, G.; Bowen, R. C.; et al.
 Source: Physical Review B Volume: 66 Issue: 12 Published: 2002
 Times Cited: 154
 DOI: 125207 10.1103/PhysRevB.66.125207
added
12-Feb-12
9.  Title: Boundary conditions for the electronic structure of finite-extent embedded semiconductor nanostructures
 Author(s): Lee, S.; Oyafuso, F.; von Allmen, P.; et al.
 Source: Physical Review B Volume: 69 Issue: 4 Published: 2004
 Times Cited: 147
 DOI: 045316 10.1103/PhysRevB.69.045316
added
12-Feb-12
10.  Title: Electronic properties of silicon nanowires
 Author(s): Zheng, Y.; Rivas, C.; Lake, R.; et al.
 Source: Ieee Transactions on Electron Devices Volume: 52 Issue: 6 Pages: 1097-1103 Published: 2005
 Times Cited: 132
 DOI: 10.1109/ted.2005.848077
added
12-Feb-12
publication(s)  
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